Semiconductor device and method for fabricating the same
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Abstract
A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.
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Citations
14 Claims
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1-6. -6. (canceled)
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7. A semiconductor device comprising:
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a porous low-dielectric-constant film formed on a substrate and having an opening; and a fine particle film composed of a plurality of aggregately deposited fine particles formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, wherein the fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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Specification