BONDING STRUCTURES AND METHODS OF FORMING BONDING STRUCTURES
First Claim
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1. A semiconductor structure, comprising:
- a first substrate comprising a passivation layer formed thereover, the passivation layer comprising at least one first opening exposing a bonding pad formed over the first substrate; and
a second substrate bonded over the passivation layer, the second substrate comprising at least one second opening substantially aligned with and facing the first opening.
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Abstract
A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening.
20 Citations
20 Claims
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1. A semiconductor structure, comprising:
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a first substrate comprising a passivation layer formed thereover, the passivation layer comprising at least one first opening exposing a bonding pad formed over the first substrate; and a second substrate bonded over the passivation layer, the second substrate comprising at least one second opening substantially aligned with and facing the first opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure, comprising:
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a first substrate comprising a passivation layer formed thereover, the passivation layer comprising at least one first opening exposing a first bonding pad formed over the first substrate, the first substrate comprising at least one through wafer via (TWV) formed therein; and a second substrate bonded over the passivation layer with a fusion bond, the second substrate comprising at least one second opening substantially aligned with and facing the first opening. - View Dependent Claims (11, 12)
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13. A method of forming a semiconductor structure, comprising:
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bonding a dummy substrate over a first substrate, the first substrate comprising a passivation layer formed thereover, the passivation layer comprising at least one first opening in which a first bonding pad is formed, the dummy substrate comprising at least one second opening aligned with and facing the first opening; thinning the first substrate using the dummy substrate as a carrier for the first substrate; and thinning the dummy substrate to expose the first opening through the second opening. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification