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BONDING STRUCTURES AND METHODS OF FORMING BONDING STRUCTURES

  • US 20080122114A1
  • Filed: 11/27/2006
  • Published: 05/29/2008
  • Est. Priority Date: 11/27/2006
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a first substrate comprising a passivation layer formed thereover, the passivation layer comprising at least one first opening exposing a bonding pad formed over the first substrate; and

    a second substrate bonded over the passivation layer, the second substrate comprising at least one second opening substantially aligned with and facing the first opening.

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