MICRO-ELECTROMECHANICAL SYSTEM (MEMS) BASED CURRENT & MAGNETIC FIELD SENSOR HAVING IMPROVED SENSITIVITIES

• US 20080122431A1
• Filed: 04/11/2007
• Published: 05/29/2008
• Est. Priority Date: 06/07/2004
• Status: Active Grant

• Current Assignee: ABB SPA (ABB Limited)
• Original Assignee: General Electric Company
• Inventors: CLAYDON, GLENN SCOTT, ZRIBI, ANIS, MEYER, LAURA JEAN, JONES, DEBBIE GAHATON, CHANDRASEKARAN, SHANKAR, KAPUSTA, CHRISTOPHER JAMES, BERKCAN, ERTUGRUL
• Granted Patent: US 7,508,189 B2
• Time in Patent Office: Days
• US Class Current: 324/126
• CPC Class Codes: G01R 15/148 involving the measuring of a magnetic field or electric field G01R15/18, G01R15/20, G01R15/24, G01R15/26 take precedence
• CPC Class Codes: G01R 15/207 Constructional details independent of the type of device used
• CPC Class Codes: G01R 33/0283 in which a current or voltage is generated due to relative movement of conductor and magnetic field
• CPC Class Codes: G01R 33/0286 comprising microelectromechanical systems [MEMS] MEMS devices in general B81B
• CPC Class Codes: G01R 35/005 Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references G01R33/0035, G01R35/002 take precedence
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component a structural component comprising a silicon substrate and a compliant layer comprising a material selected from the group consisting of silicon dioxide and silicon nitride, a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field, and a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.

Claims

1-32. -32. (canceled)

33. A micro-electromechanical system current and magnetic field sensor for sensing a magnetic field produced by a current carrying conductor, comprising:

a structural component comprising a substrate and a compliant layer;

a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field; and

a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.

34. The micro-electromechanical system of claim 33, wherein the substrate comprises silicon.

35. The micro-electromechanical system of claim 34, wherein the compliant layer comprises silicon dioxide or silicon nitride.

36. The micro-electromechanical system of claim 33, wherein the compliant layer comprises at least one low stress silicon layer having a residual stress of less than about 100 mega pascals.

37. The micro-electromechanical system current and magnetic field sensor of claim 36, wherein the low stress silicon layer comprises a first silicon nitride layer.

38. The micro-electromechanical system current and magnetic field sensor of claim 37, wherein the low stress silicon region further comprises a second silicon nitride layer of formula SixNy where the ratio x:

y is less than or equal to 1.

39. The micro-electromechanical system current and magnetic field sensor of claim 33, wherein the strain responsive component comprises a piezo resistive element.

40. The micro-electromechanical system current and magnetic field sensor of claim 33, wherein the structural component comprises a spring element selected from the group consisting of a cantilever, a deflectable membrane, a torsion element and combinations thereof.

41. The micro-electromechanical system current and magnetic field sensor of claim 33, wherein the structural component is configured to register a bending action responsive to the mechanical indication from the magnetic-to-mechanical converter.

42. A micro-electromechanical system current and magnetic field sensor for sensing a magnetic field produced by a current carrying conductor, comprising:

a structural component configured to register a bending action and a twisting action responsive to the mechanical indication from the magnetic-to-mechanical converter;

a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field; and

a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.

43. The micro-electromechanical system of claim 42, wherein the structural component comprises a silicon substrate.

44. The micro-electromechanical system of claim 42, wherein the structural component further comprises a silicon dioxide or silicon nitride region.

45. The micro-electromechanical system current and magnetic field sensor of claim 42, wherein the structural component comprises:

a first spring element; and

a torsion element coupled to the spring element, wherein the first spring element is displaced about the torsion element responsive to the mechanical indication to concurrently effect the bending action and the twisting action.

46. The micro-electromechanical system current and magnetic field sensor of claim 45, further comprising a hinge element coupled between the spring element and the torsion element such that as the spring element is displaced responsive to the mechanical indication, the bending action is registered by the hinge element and the twisting action is concurrently registered by the torsion element.

47. The micro-electromechanical system current and magnetic field sensor of claim 46, wherein the strain responsive component comprises a piezo resistive device coupled to the torsion element.

48. The micro-electromechanical system current and magnetic field sensor of claim 42, wherein the structural component comprises:

a spring element having a first end configured to experience a first stress responsive to the mechanical indication and a second end configured to receive a second stress responsive to the mechanical indication, wherein the second stress is substantially opposite in direction to the first stress; and

a torsion element coupled to the spring element and about which the first and second ends of the spring element are displaced in response to the first and second stresses, wherein the torsion element is configured to register at least the twisting action.

49. The micro-electromechanical system current and magnetic field sensor of claim 48, further comprising a first hinge element coupled between the first end of the spring element and the torsion element and a second hinge element coupled between the second end of the spring element and the torsion element.

50. The micro-electromechanical system current and magnetic field sensor of claim 49, wherein the strain responsive component comprises at least one piezo resistive device coupled to the torsion element.

51. A micro-electromechanical system current and magnetic field sensor for sensing a magnetic field produced by a current carrying conductor, comprising:

a structural component comprising a region of low-stress silicon;

a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field; and

a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.

52. The micro-electromechanical system of claim 51, wherein the low-stress silicon comprises a residual stress of less than about 100 mega pascals.

53. A method for fabricating a micro-electromechanical system magnetic field sensing component comprising:

providing a substrate including a compliant layer comprising silicon dioxide or silicon nitride;

forming a strain responsive component on the substrate;

forming a magnetic-to-mechanical converter on the substrate; and

removing at least a portion of the substrate to release a spring element formed at least partly by the compliant layer.

54. The method of claim 53, wherein forming a strain responsive component on the substrate comprises:

depositing a layer of amorphous polysilicon on an upper side of the substrate; and

doping the polysilicon to create a piezo resistive element out of the polysilicon.