Semiconductor laser device having scattering portion and method of fabricating the device

• US 20080123696A1
• Filed: 09/13/2007
• Published: 05/29/2008
• Est. Priority Date: 11/28/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Shim, Join-in, Ryu, Han-youl, Sung, Youn-joon
• Application Number:
  US11/898,577
• Publication Number:
  US 20080123696A1
• Time in Patent Office: Days
• US Class Current: 372/9
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such, the semiconductor laser device may emit higher quality laser light.

Claims

1. A semiconductor laser device comprising:

a substrate;

a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate; and

a scattering portion on a bottom surface of the substrate in order to scatter light.

2. The semiconductor laser device of claim 1, further comprising:

a n-electrode on the bottom surface of the substrate, wherein the n-electrode is disposed on an area outside of the scattering portion.

3. The semiconductor laser device of claim 2, further comprising:

a ridge wave guide formed by protruding a portion of the second clad layer upward, wherein the scattering portion is wider than the ridge wave guide.

4. The semiconductor laser device of claim 1, further comprising:

a n-electrode on an upper surface of the substrate, wherein the scattering portion is formed on the entire bottom surface of the substrate.

5. The semiconductor laser device of claim 1, wherein the substrate is a GaN substrate or a SiC substrate.

6. A method of fabricating a semiconductor laser device, the method comprising:

forming a light emitting structure by stacking material layers including a first clad layer, an active layer, and a second clad layer on a substrate; and

forming a scattering portion having a rough surface by wet-etching a bottom surface of the substrate.

7. The method of claim 6, wherein in the forming of the scattering portion, a KOH solution is used as an etchant.

8. The method of claim 6, wherein the forming of the light emitting structure comprises:

forming a ridge wave guide by etching a portion of the second clad layer, wherein in the forming of the scattering portion, a portion of the bottom surface of the substrate corresponding to the width of the ridge wave guide is wet-etched.

9. The method of claim 6, wherein the substrate is a GaN substrate or a SiC substrate.