METHOD OF FORMING RU FILM AND METAL WIRING STRUCTURE
First Claim
Patent Images
1. A method of depositing a ruthenium (Ru) thin film on a substrate, comprising:
- (i) treating a surface of the substrate with a metal-organic precursor;
(ii) adsorbing a ruthenium precursor onto the treated surface of the substrate;
(iii) treating the adsorbed ruthenium precursor with an excited reducing gas;
and(iv) repeating steps (ii) and (iii), thereby forming a ruthenium thin film on the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of depositing a ruthenium (Ru) thin film on a substrate includes: (i) treating a surface of the substrate with a metal-organic precursor; (ii) adsorbing a ruthenium precursor onto the treated surface of the substrate; (iii) treating the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating steps (ii) and (iii), thereby forming a ruthenium thin film on the substrate.
147 Citations
19 Claims
-
1. A method of depositing a ruthenium (Ru) thin film on a substrate, comprising:
-
(i) treating a surface of the substrate with a metal-organic precursor; (ii) adsorbing a ruthenium precursor onto the treated surface of the substrate; (iii) treating the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating steps (ii) and (iii), thereby forming a ruthenium thin film on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
Specification