Hafnium tantalum oxynitride high-k dielectric and metal gates

• US 20080124908A1
• Filed: 08/31/2006
• Published: 05/29/2008
• Est. Priority Date: 08/31/2006
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Bhattacharyya, Arup, Ahn, Kie Y., Forbes, Leonard
• Granted Patent: US 7,605,030 B2
• Time in Patent Office: Days
• US Class Current: 438/591
• CPC Class Codes: G11C 16/0466 comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] G11C16/0483, G11C16/0491 take precedence
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3142 of nano-laminates, e.g. alternating layers of Al203-Hf02
• CPC Class Codes: H01L 21/31637 Deposition of Tantalum oxides, e.g. Ta2O5
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Abstract

Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.

Claims

1-49. -49. (canceled)

50. A method comprising:

forming a sacrificial carbon layer over a non-sacrificial layer, the non-sacrificial layer including at least one of a refractory nitride, a refractory oxide and a refractory oxynitride;

forming a sacrificial carbon spacer adjacent to the sacrificial carbon layer;

replacing the sacrificial carbon spacer with a substantially carbon-free layer; and

replacing the sacrificial carbon layer with a layer that includes a metal.

51. The method of claim 50, wherein forming a sacrificial carbon layer over a non-sacrificial layer includes forming a sacrificial carbon layer in contact with the non-sacrificial layer.

52. The method of claim 50, wherein forming a sacrificial carbon layer over a non-sacrificial layer includes forming a sacrificial carbon layer supported by the non-sacrificial layer.

53. The method of claim 50, wherein replacing the sacrificial carbon layer includes replacing with one or more metals selected from a group consisting essentially of aluminum, alloys of aluminum, tungsten, molybdenum, tantalum, alloys of tantalum, alloys of tungsten, gold, alloys of gold, silver, alloys of silver, platinum, rhenium, ruthenium, rhodium, nickel, osmium, palladium, iridium, cobalt, and germanium.

54. The method of claim 50, wherein replacing the sacrificial carbon layer includes forming a self aligned metal electrode over the non-sacrificial layer using the sacrificial spacer.

55. The method of claim 50, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over the non-sacrificial layer that includes a HfTaON layer.

56. The method of claim 50, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over a composite layer comprising at least two layers of a HfN, a HfO₂, a HfON, a TaN, a Ta₂O₅, a TaON, and a Hf_xTa_yO_zN_w, where x, y, z, and w are atomic mole fractions.

57. The method of claim 56, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over a non-sacrificial layer comprising a Hf_xTa_yO_zN_w layer where x, y, z, and w are atomic concentrations, and where x+y+z+w=1.

58. The method of claim 50, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over a layer comprising a nanolaminate.

59. The method of claim 58, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over a layer comprising a nanolaminate, the nanolaminate selected from a group consisting essentially of HfN, HfO₂, HfON, TaN, Ta₂O₅, TaON, and Hf_xTa_yO_zN_w, where x=0 or 1, y=0, 1, or 2, z=0, 1, or 5, and w=0 or 1, and where x+y+z +w>

3.

60. The method of claim 50, further comprising forming a non-sacrificial layer.

61. The method of claim 60, wherein forming a non-sacrificial layer includes forming a nanolaminate comprising at least two of HfN, HfO₂, and HfON.

62. The method of claim 60, wherein forming a non-sacrificial layer includes forming a nanolaminate comprising at least two of TaN, Ta₂O₅, and TaON.

63. A method comprising:

forming a composite layer including a refractory metal;

forming a sacrificial carbon layer adjacent the composite layer,

forming a sacrificial carbon spacer adjacent the sacrificial carbon layer;

substituting a non-carbon layer for the sacrificial carbon spacer; and

replacing the sacrificial carbon layer with a layer that includes a metal.

64. The method of claim 63, wherein forming a composite layer includes forming s layer of Hf_xTa_yO_zN_w, where x, y, z, and w are atomic concentrations, and where x+y+z+w=1.

65. The method of claim 63, wherein forming a composite layer includes forming a nanolaminate.

66. The method of claim 65, wherein forming a nanolaminate includes forming at least one of HfN, HfO₂, HfON, and at least one of TaN, Ta₂O₅ and TaON.

67. The method of claim 65, wherein forming a nanolaminate includes alternatingly forming at least one of HfN, HfO₂, HfON, and at least one of TaN, Ta₂O₅ and TaON.

68. The method of claim 63, wherein forming a composite layer includes forming Hf_xTa_yO_zN_w, where x=0 or 1, y=0, 1, or 2, z=0, 1, or 5, and w=0 or 1, and where x+y+z +w>

3.

69. The method of claim 63, wherein forming a composite layer includes depositing at least one of Hf and Ta.

70. The method of claim 69, wherein forming a composite layer includes combining at least one of oxygen and nitrogen with the Hf and the Ta.

71. The method of claim 63, wherein forming a composite layer includes forming a composite layer including at least two elements selected from a group consisting essentially of Hf, Ta, N, and O.

72. The method of claim 63, wherein forming a composite layer includes forming a dielectric.

70-1. The method of claim 63, wherein forming a composite layer includes forming one of TaN/HfN, TaN/HfON, TaON/HfN, TaON/HfON, TaN/HfO₂, Ta₂O₅/HfN, TaON/HfO₂, Ta₂O₅/HfON, and Ta₂O₅/HfO₂.