Hafnium tantalum oxynitride high-k dielectric and metal gates
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Accused Products
Abstract
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.
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Citations
72 Claims
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1-49. -49. (canceled)
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50. A method comprising:
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forming a sacrificial carbon layer over a non-sacrificial layer, the non-sacrificial layer including at least one of a refractory nitride, a refractory oxide and a refractory oxynitride; forming a sacrificial carbon spacer adjacent to the sacrificial carbon layer; replacing the sacrificial carbon spacer with a substantially carbon-free layer; and replacing the sacrificial carbon layer with a layer that includes a metal. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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63. A method comprising:
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forming a composite layer including a refractory metal; forming a sacrificial carbon layer adjacent the composite layer, forming a sacrificial carbon spacer adjacent the sacrificial carbon layer; substituting a non-carbon layer for the sacrificial carbon spacer; and replacing the sacrificial carbon layer with a layer that includes a metal. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72)
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70-1. The method of claim 63, wherein forming a composite layer includes forming one of TaN/HfN, TaN/HfON, TaON/HfN, TaON/HfON, TaN/HfO2, Ta2O5/HfN, TaON/HfO2, Ta2O5/HfON, and Ta2O5/HfO2.
Specification