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ORGANOSILANE COMPOUNDS FOR MODIFYING DIELECTRICAL PROPERTIES OF SILICON OXIDE AND SILICON NITRIDE FILMS

  • US 20080124946A1
  • Filed: 11/16/2007
  • Published: 05/29/2008
  • Est. Priority Date: 11/28/2006
  • Status: Abandoned Application
First Claim
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1. A process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:

  • providing a structure precursor containing silicon;

    providing a dopant precursor containing carbon;

    mixing the dopant precursor containing carbon with the structure precursor containing silicon to obtain a mixture having a mixing ratio of Rm (% weight of the dopant precursor containing carbon in mixture between 2% and 85%; and

    a flow rate of Fm;

    providing a chemical modifier having a flow rate of Fc;

    having a flow ratio R2 defined as R2=Fm/Fc between 25% and 75%; and

    producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon.

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