ORGANOSILANE COMPOUNDS FOR MODIFYING DIELECTRICAL PROPERTIES OF SILICON OXIDE AND SILICON NITRIDE FILMS

• US 20080124946A1
• Filed: 11/16/2007
• Published: 05/29/2008
• Est. Priority Date: 11/28/2006
• Status: Abandoned Application

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: KARWACKI, EUGENE JOSEPH, XIAO, MANCHAO, THRIDANDAM, HAREESH, Lei, Xinjian
• Application Number:
  US11/941,532
• Publication Number:
  US 20080124946A1
• Time in Patent Office: Days
• US Class Current: 438/784
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.

Claims

1. A process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:

providing a structure precursor containing silicon;

providing a dopant precursor containing carbon;

mixing the dopant precursor containing carbon with the structure precursor containing silicon to obtain a mixture having a mixing ratio of Rm (% weight of the dopant precursor containing carbon in mixture between 2% and 85%; and

a flow rate of Fm;

providing a chemical modifier having a flow rate of Fc;

having a flow ratio R2 defined as R2=Fm/Fc between 25% and 75%; and

producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon.

2. The process of claim 1 wherein the depositing comprising increasing the mixing ratio Rm to increase the etch resistance.

3. The process of claim 1 wherein the depositing comprising increasing the mixing ratio Rm to increase deposition rate.

4. The process of claim 1 wherein the depositing comprising increasing the mixing ratio Rm to decrease film density.

5. The process of claim 1 wherein the depositing comprising increasing the flow ration R2 to increase the etch resistance.

6. The process of claim 1 wherein the depositing comprising increasing the flow ration R2 to increase deposition rate.

7. The process of claim 1 wherein the depositing comprising increasing the flow ration R2 to decrease film density.

8. The process of claim 1 wherein the depositing is performed at a temperature between 350°

C. and 700°

C., and at a pressure between 0.2 torr and 10 torr.

9. The process of claim 1 wherein the chemical modifier is selected from the group consisting of oxygen, nitrogen, ammonia, helium, argon, xenon, hydrogen and mixtures thereof.

10. The process of claim 1 wherein the structure precursor containing silicon is selected from the group consisting of bis(tertiarybutyl)silane, tetraethylorthosilcate, dichlorosilane, hexachlorodisilane and mixtures thereof.

11. The process of claim 1 wherein the depositing is selected from the group consisting of Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Remote Downstream Processes.

24. The process of Claim 1 wherein the dopant precursor containing silicon is selected from the group consisting of methyl silane, dimethylsilane, trimethylsilane, tetramethyl silane, tertavinyl silane, phenylsilane, cyclohexylslane and mixtures thereof.

12. A Low Pressure Chemical Vapor Deposition (LPCVD) process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:

providing a bis(tertiarybutyl)silane precursor;

providing a phenylsilane precursor;

mixing the phenylsilane precursor with the bis(tertiarybutyl)silane precursor to obtain a mixture having a mixing ratio of Rm (% weight of the phenylsilane precursor between 2% and 85% and a flow rate of Fm;

providing a chemical modifier selected from the group consisting of oxygen, nitrogen, ammonia and mixtures thereof; and

having a flow a rate of Fc;

having a flow ration R2 defined as R2=Fm/Fc between 25% and 75%; and

producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon.

13. The process of claim 12 wherein the depositing comprising increasing the mixing ratio Rm to increase the etch resistance.

14. The process of claim 12 wherein the depositing comprising increasing the mixing ratio Rm to increase deposition rate.

15. The process of claim 12 wherein the depositing comprising increasing the mixing ratio Rm to decrease film density.

16. The process of claim 12 wherein the depositing comprising increasing the flow ratio R2 to increase the etch resistance.

17. The process of claim 12 wherein the depositing comprising increasing the flow ratio R2 to increase deposition rate.

18. The process of claim 12 wherein the depositing comprising increasing the flow ratio R2 to decrease film density.

19. The process of claim 12 wherein the depositing is performed at a temperature between 350°

C. and 700°

C., and at a pressure between 0.2 torr and 10 torr.

20. A Low Pressure Chemical Vapor Deposition (LPCVD) process for depositing a silicon oxide or a silicon nitride film having enhanced etch resistance comprising:

providing an organosilane precursor selected from the group consisting of tetravinyl silane, phenylsilane, cyclohexylsilane and mixtures thereof; and

having a flow rate of Fs;

providing a chemical modifier selected from the group consisting of oxygen, nitrogen, ammonia and mixtures thereof; and

having a flow rate of Fc;

having a flow ration R1 defined as R1=Fs/Fc between 25% and 75%; and

producing the silicon oxide film or the silicon nitride film having enhanced etch resistance.

21. The process of claim 20 wherein the depositing comprising increasing the flow ratio R1 to increase etch resistance.

22. The process of claim 20 wherein the depositing comprising increasing processing temperature to increase etch resistance.

23. The process of claim 20 wherein the depositing is performed at a temperature between 350°

C. and 700°

C., and at a pressure between 0.2 torr and 10 torr.