ORGANOSILANE COMPOUNDS FOR MODIFYING DIELECTRICAL PROPERTIES OF SILICON OXIDE AND SILICON NITRIDE FILMS
First Claim
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1. A process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:
- providing a structure precursor containing silicon;
providing a dopant precursor containing carbon;
mixing the dopant precursor containing carbon with the structure precursor containing silicon to obtain a mixture having a mixing ratio of Rm (% weight of the dopant precursor containing carbon in mixture between 2% and 85%; and
a flow rate of Fm;
providing a chemical modifier having a flow rate of Fc;
having a flow ratio R2 defined as R2=Fm/Fc between 25% and 75%; and
producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon.
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Abstract
The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.
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Citations
24 Claims
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1. A process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:
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providing a structure precursor containing silicon; providing a dopant precursor containing carbon; mixing the dopant precursor containing carbon with the structure precursor containing silicon to obtain a mixture having a mixing ratio of Rm (% weight of the dopant precursor containing carbon in mixture between 2% and 85%; and
a flow rate of Fm;providing a chemical modifier having a flow rate of Fc; having a flow ratio R2 defined as R2=Fm/Fc between 25% and 75%; and producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 24)
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12. A Low Pressure Chemical Vapor Deposition (LPCVD) process for depositing a carbon containing silicon oxide film or a carbon containing silicon nitride film having enhanced etch resistance comprising:
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providing a bis(tertiarybutyl)silane precursor; providing a phenylsilane precursor; mixing the phenylsilane precursor with the bis(tertiarybutyl)silane precursor to obtain a mixture having a mixing ratio of Rm (% weight of the phenylsilane precursor between 2% and 85% and a flow rate of Fm; providing a chemical modifier selected from the group consisting of oxygen, nitrogen, ammonia and mixtures thereof; and
having a flow a rate of Fc;having a flow ration R2 defined as R2=Fm/Fc between 25% and 75%; and producing the carbon containing silicon oxide film or the carbon containing silicon nitride film having enhanced etch resistance wherein etch resistance is increased with increasing incorporation of the carbon. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A Low Pressure Chemical Vapor Deposition (LPCVD) process for depositing a silicon oxide or a silicon nitride film having enhanced etch resistance comprising:
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providing an organosilane precursor selected from the group consisting of tetravinyl silane, phenylsilane, cyclohexylsilane and mixtures thereof; and
having a flow rate of Fs;providing a chemical modifier selected from the group consisting of oxygen, nitrogen, ammonia and mixtures thereof; and
having a flow rate of Fc;having a flow ration R1 defined as R1=Fs/Fc between 25% and 75%; and producing the silicon oxide film or the silicon nitride film having enhanced etch resistance. - View Dependent Claims (21, 22, 23)
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Specification