APPARATUS AND METHOD FOR INTRODUCING PARTICLES USING A RADIO FREQUENCY QUADRUPOLE LINEAR ACCELERATOR FOR SEMICONDUCTOR MATERIALS
First Claim
1. An apparatus for providing charged particles for manufacture of one or more detachable semiconductor films capable of being free-standing, the apparatus comprising:
- an ion source to generate a plurality of charged particles, the plurality of charged particles being provided as a collimated beam at a first energy level;
an radio frequency quadrupole (RFQ) linear accelerator, the RFQ linear accelerator comprising a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N, where N is an integer greater than 1, each of the plurality of modular RFQ elements being coupled successively to each other, the RFQ linear accelerator controls and accelerates the beam of charged particles at the first energy level into a beam of charge particles having a second energy level, RFQ element numbered 1 being operably coupled to the ion source;
an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator;
a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles;
a process chamber coupled to the beam expander; and
a workpiece provided within the process chamber, the workpiece including a surface region being implanted by the expanded beam of charged particles.
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Accused Products
Abstract
A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted
149 Citations
28 Claims
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1. An apparatus for providing charged particles for manufacture of one or more detachable semiconductor films capable of being free-standing, the apparatus comprising:
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an ion source to generate a plurality of charged particles, the plurality of charged particles being provided as a collimated beam at a first energy level; an radio frequency quadrupole (RFQ) linear accelerator, the RFQ linear accelerator comprising a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N, where N is an integer greater than 1, each of the plurality of modular RFQ elements being coupled successively to each other, the RFQ linear accelerator controls and accelerates the beam of charged particles at the first energy level into a beam of charge particles having a second energy level, RFQ element numbered 1 being operably coupled to the ion source; an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator; a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles; a process chamber coupled to the beam expander; and a workpiece provided within the process chamber, the workpiece including a surface region being implanted by the expanded beam of charged particles. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for introducing charged particles for manufacture of one or more detachable semiconductor films capable of being free-standing for device applications, the method comprising:
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generating a beam of charged particles with a beam current at a first energy level using an ion source; transferring the beam at a first energy level to a beam at a second energy level through a radio frequency quadrupole (RFQ) linear accelerator coupled to the ion source, the RFQ linear accelerator comprising a plurality of modular RFQ elements numbered 1 to N, where N is an integer greater than 1; processing the beam at the second energy level with a beam expander coupled to the RFQ linear accelerator to expand the beam size capable of implanting the charges particles; and irradiating the beam at the second energy level into a workpiece through a surface region, the workpiece being mounted in a process chamber coupled to the beam expander in such a way that the beam at the second energy level with a certain beam size can scan across the surface region and create a cleave region with an averaged implantation dose at a depth of greater than about 50 microns from the surface region of the workpiece. - View Dependent Claims (13, 14, 15)
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16. A system comprising:
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an ion source configured to output a low energy ion beam; a low energy beam transport (LEBT) section configured to focus the low energy ion beam received from the ion source; a linear accelerator configured to convert the focused low energy ion beam into a high energy ion beam; a high energy beam transport (HEBT) section configured to receive the high energy ion beam; and an end station configured to support a bulk material such that a surface of the bulk material is exposed to the high energy ion beam. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A method of fabricating a free standing film from a bulk material, the method comprising:
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exposing a surface of the bulk material to a high energy beam of ions generated by an ECR ion source coupled to a RFQ linear accelerator, such that hydrogen ions from the beam are implanted to a depth of about 20 microns or greater into the bulk material; and cleaving the free-standing film from the bulk material at the depth. - View Dependent Claims (25, 26, 27)
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28. An apparatus comprising:
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an ECR ion source; a low energy beam transport (LEBT) section comprising an Einzel lens and having an inlet in vacuum communication with the ECR ion source; a linear accelerator section comprising three successive RFQ stages to elevate a beam of hydrogen ions outlet from the LEBT section to an energy of between about 0.5 and 7 MeV; a high energy beam transport (HEBT) section in vacuum communication with an outlet of the linear accelerator section, the HEBT section comprising a beam scanner; and an end station configured to translate a surface of a bulk material along an axis while the surface is exposed to the scanned high energy beam.
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Specification