ELECTRONIC DEVICE WITH CONNECTING STRUCTURE
First Claim
1. A semiconductor device including a connecting structure comprising:
- an edge region;
a first trench and a second trench running toward the edge region;
a first electrode within the first trench; and
a second electrode within the second trench;
wherein the first and second electrodes are arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches;
wherein the first electrode extends, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region; and
wherein the first electrode is connected to a connection structure for a first potential, and the second electrode is connected to a connection structure for a second potential.
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Accused Products
Abstract
A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.
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Citations
25 Claims
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1. A semiconductor device including a connecting structure comprising:
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an edge region; a first trench and a second trench running toward the edge region; a first electrode within the first trench; and a second electrode within the second trench; wherein the first and second electrodes are arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches; wherein the first electrode extends, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region; and wherein the first electrode is connected to a connection structure for a first potential, and the second electrode is connected to a connection structure for a second potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device including a connecting structure comprising:
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a first edge region; a second edge region opposite the first edge region; a central region arranged between the first edge region and the second edge region; first, second, and third trenches running toward the first edge region and the second edge region; a first electrode within the first trench, a second electrode within the second trench, and a third electrode within the third trench, the first, second, and third electrodes being arranged in an electrode plane arranged with regard to a main surface of a substrate of the electronic device; the first electrode extending farther into the first edge region than the second electrode and the third electrode; the third electrode extending farther into the second edge region than the first electrode and the second electrode; the first and third electrodes not extending into the central region; the first electrode and the third electrode being arranged on a straight connecting line; the second electrode being arranged offset to the connecting line; and the first electrode and the third electrode being contacted with a connection structure for a first potential, and the second electrode being connected with a connection structure for a second potential. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A connecting structure for an electronic device, comprising:
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an edge region; a first trench and a second trench running toward the edge region; a first electrode within the first trench, no further electrode being arranged, to the side of the first electrode, within the first trench; and a second electrode within the second trench, no further electrode being arranged, to the side of the second electrode, within the second trench, wherein the first electrode, at an edge region side end of the first trench, extends farther toward the edge region than the second electrode at an edge region side end of the second trench extends towards the edge region; and wherein the first electrode is connected to a connection structure for a first potential, and the second electrode is connected to a connection structure for a second potential.
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Specification