Micro-electro-mechanical systems device and integrated circuit device integrated in a three-dimensional semiconductor structure

• US 20080128901A1
• Filed: 11/30/2006
• Published: 06/05/2008
• Est. Priority Date: 11/30/2006
• Status: Abandoned Application

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: D'Acosta, Carl E., Zurcher, Peter, Remmel, Thomas P.
• Application Number:
  US11/606,739
• Publication Number:
  US 20080128901A1
• Time in Patent Office: Days
• US Class Current: 257/724
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]

Abstract

Semiconductor devices (300, 400, and 500) including an integrated circuit (IC) device (100) coupled to a micro-electro-mechanical systems (MEMS) device (200) and a method (600) for producing same are disclosed. The IC device includes a die seal ring (130) and the MEMS device includes a MEMS seal ring (230), and the IC device is coupled to the MEMS device via the die seal ring and the MEMS seal ring. The MEMS device may include one or more passive devices (450, 475) coupled to it. Moreover, a substrate (510) including an aperture (550) may be coupled to the passive device, wherein the aperture enables the passive device to be trimmed after being disposed on the MEMS device. The semiconductor devices include an RF signal path (486) and at least one other signal path (482 and 484), wherein the other signal path(s) may be an analog and/or a digital signal path.

Claims

1. A semiconductor device comprising:

an integrated circuit (IC) device having a die seal ring;

a micro-electro-mechanical systems (MEMS) device including a MEMS seal ring and a back surface, wherein the IC device is coupled to the MEMS device via coupling the die seal ring and the MEMS seal ring;

a first passive device coupled to the back surface; and

a substrate coupled to the passive device such that the first passive device is disposed between the substrate and the back surface, the substrate including at least one aperture extending through the substrate and configured to enable the first passive device to be trimmed when coupled to the back surface.

4. The semiconductor device of claim 1, wherein the first passive device is one of a resistor, a capacitor, a coupler, a filter, and a resonator.

6. The semiconductor device of claim 1, wherein the MEMS device includes separate DC signal and RF signal paths.

7. The semiconductor device of claim 1, wherein the MEMS device includes a first signal path and a second signal path, and the IC device includes a third signal path coupled to the first signal path and a fourth signal path coupled to the second signal path, wherein the first and third signal paths are configured to relay analog signals and the second and fourth signal paths are configured to relay digital signals.

8. The semiconductor device of claim 1, wherein the die seal ring and the MEMS seal ring are configured to enable the MEMS device to be sealed when the MEMS device is coupled to the IC device.

9. The semiconductor device of claim 8, wherein the MEMS device is one of hermetically sealed and vacuum sealed when coupled to the IC device.

10. The semiconductor device of claim 1, wherein the IC device is one of a gallium arsenide device, a complementary metal oxide semiconductor (CMOS) device, and a bi-polar complementary metal oxide semiconductor (Bi-CMOS) device.

21. The semiconductor device of claim 1, further comprising a second passive device coupled to the back surface and the substrate such that the second passive device is disposed between the substrate and the back surface, wherein the aperture is further configured to enable the second passive device to be trimmed when coupled to the back surface.

22. The semiconductor of claim 21, wherein the first passive device and the second passive device are each one of a resistor, a capacitor, a coupler, a filter, and a resonator.

23. The semiconductor device of claim 22, wherein the first passive device and the second passive device are different passive devices.

2-3. -3. (canceled)

5. (canceled)

11. (canceled)

12. A method of producing a semiconductor device, comprising:

forming an integrated circuit (IC) device including a die seal ring;

forming a micro-electro-mechanical systems (MEMS) device including a MEMS seal ring and a back surface;

coupling the die seal ring to the MEMS seal ring;

coupling at least one passive device to the back surface;

coupling a substrate to the at least one passive device such that the at least one passive device is disposed between the substrate and the back surface;

forming an aperture in the substrate; and

trimming the at least one passive device via the aperture.

14. The method of claim 12, wherein coupling the at least one passive device to the back surface occurs prior to coupling the MEMS device to the IC device.

15. The method of claim 12, wherein coupling the at least one passive device to the back surface occurs after coupling the MEMS device to the IC device.

19. The method of claim 12, wherein trimming comprises trimming at least one of a resistor, a capacitor, a coupler, a filter, and a resonator.

20. The method of claim 12, further comprising sealing the MEMS device when the MEMS device and the IC device are coupled to one another, wherein sealing comprises one of hermetically sealing and vacuum sealing the MEMS device when coupling the MEMS device to the IC device.

24. The method of claim 12, wherein the aperture is formed before the substrate is coupled to the at least one passive device.

25. The method of claim 12, wherein the aperture is formed after the substrate is coupled to the at least one passive device.

13. (canceled)

16-18. -18. (canceled)

26. A method of producing a semiconductor device, comprising:

forming a micro-electro-mechanical systems (MEMS) device including a back surface;

coupling at least one passive device to the back surface;

coupling a substrate to the at least one passive device such that the at least one passive device is disposed between the substrate and the back surface;

forming an aperture in the substrate; and

trimming the at least one passive device via the aperture.

27. The method of claim 26, wherein the aperture is formed after the substrate is coupled to the at least one passive device.

28. The method of claim 26, wherein the aperture is formed before the substrate is coupled to the at least one passive device.