Semiconductor device and method of manufacturing the same
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate comprising a front surface, a back surface and a side surface;
a device element formed on the front surface;
a pad electrode disposed on the front surface and electrically connected to the device element;
an insulation film covering the side surface and the back surface;
a wiring layer disposed on the side surface and electrically connected to the pad electrode;
a sidewall electrode disposed on the side surface so as to be electrically connected to the pad electrode through the wiring layer; and
a protection layer disposed on the back surface,wherein the sidewall electrode is exposed along the side surface and accommodated in an opening formed in the protection layer.
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Accused Products
Abstract
The invention is directed to providing a package type semiconductor device with high reliability and smaller size and a method of manufacturing the same. A semiconductor substrate formed with a device element and a pad electrode on its front surface is prepared. The semiconductor substrate is then selectively etched from its back surface to form an opening. A second insulation film is then formed covering the side and back surfaces of the semiconductor substrate. First and second insulation films on the bottom of the opening are then selectively removed to expose a portion of the pad electrode. A wiring layer is then formed along the side surface of the semiconductor substrate, being electrically connected with the exposed pad electrode. An electrode connect layer is then formed covering the wiring layer. A protection layer is then formed covering the back surface of the semiconductor substrate and having an opening in a region for formation of a sidewall electrode. Then, the sidewall electrode is formed in a region exposed by the opening of the protection layer.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate comprising a front surface, a back surface and a side surface; a device element formed on the front surface; a pad electrode disposed on the front surface and electrically connected to the device element; an insulation film covering the side surface and the back surface; a wiring layer disposed on the side surface and electrically connected to the pad electrode; a sidewall electrode disposed on the side surface so as to be electrically connected to the pad electrode through the wiring layer; and a protection layer disposed on the back surface, wherein the sidewall electrode is exposed along the side surface and accommodated in an opening formed in the protection layer. - View Dependent Claims (2, 4)
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3. The semiconductor device of claim l, further comprising a supporting body disposed on the front surface.
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5. A method of manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate comprising a device element formed on a front surface thereof and a pad electrode disposed on the front surface and electrically connected to the device element; removing a portion of the semiconductor substrate from a back surface of the semiconductor substrate to expose at least a portion of the pad electrode and form a side surface of the semiconductor substrate; forming a wiring layer on the formed side surface so as to be electrically connected to the exposed pad electrode; forming a protection layer covering the back surface and having an opening over the pad electrode; forming a sidewall electrode on the side surface at the opening of the protection layer so as to be electrically connected to the pad electrode through the wiring layer; and keeping the sidewall electrode exposed for external connection. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device assembly comprising:
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a semiconductor substrate comprising a recess portion formed in an edge region of the semiconductor substrate; a plurality of sidewall electrodes disposed in the recess portion; and a circuit board electrically connected to the semiconductor substrate through the sidewall electrodes, wherein each of the sidewall electrodes is exposed at a bottom, a sidewall and a top of the recess.
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Specification