Resonator Structure and Method of Producing It
First Claim
1. A resonator structure in particular a bulk-acoustic-wave resonator, such as a film BAW resonator or a solidly-mounted BAW resonator, comprising at least one substrate at least one reflector layer applied or deposited on the substrate at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer at least one piezoelectric layer in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer at least one top electrode layer in particular top electrode, applied or deposited on the bottom electrode layer and/or on the piezoelectric layer such that the piezoelectric layer is in between the bottom electrode layer and the top electrode layer, characterized by at least one dielectric layer applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer and the top electrode layer.
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Accused Products
Abstract
In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.
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Citations
12 Claims
- 1. A resonator structure in particular a bulk-acoustic-wave resonator, such as a film BAW resonator or a solidly-mounted BAW resonator, comprising at least one substrate at least one reflector layer applied or deposited on the substrate at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer at least one piezoelectric layer in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer at least one top electrode layer in particular top electrode, applied or deposited on the bottom electrode layer and/or on the piezoelectric layer such that the piezoelectric layer is in between the bottom electrode layer and the top electrode layer, characterized by at least one dielectric layer applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer and the top electrode layer.
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10. A method of producing a resonator structure in particular a bulk-acoustic-wave resonator, such as a film BAW resonator or a solidly-mounted BAW resonator comprising the following steps:
- (i) applying or depositing at least one reflector layer on at least one substrate (ii) applying or depositing at least one bottom electrode layer in particular bottom electrode, on the reflector layer (iii) applying or depositing at least one piezoelectric layer in particular C-axis normal piezoelectric layer, on the bottom electrode layer (iv) applying or depositing at least one top electrode layer in particular top electrode, on the bottom electrode layer and/or on the piezoelectric layer such that the piezoelectric layer is in between the bottom electrode layer and the top electrode layer characterized by at least one additional step of (v) applying or depositing at least one dielectric layer in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer and the top electrode layer.
- View Dependent Claims (11)
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12. (canceled)
Specification