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Nitride Semiconductor Device Manufacturing Method

  • US 20080132044A1
  • Filed: 12/17/2007
  • Published: 06/05/2008
  • Est. Priority Date: 03/05/2003
  • Status: Active Grant
First Claim
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1. A method of manufacturing nitride-based semiconductor devices formed onto a semiconductor substrate being a compound containing nitrogen, and a Group IIIA element for forming compounds with nitrogen, the nitride semiconductor device manufacturing method comprising:

  • a step of heating the semiconductor substrate to a film-deposition temperature;

    a step of supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas;

    a step of epitaxially growing onto the semiconductor substrate a thin film of a compound containing nitrogen and the Group IIIA element; and

    a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the front side of the semiconductor substrate.

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