Plasma Doping With Electronically Controllable Implant Angle

• US 20080132046A1
• Filed: 12/04/2006
• Published: 06/05/2008
• Est. Priority Date: 12/04/2006
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Walther, Steven Raymond
• Application Number:
  US11/566,418
• Publication Number:
  US 20080132046A1
• Time in Patent Office: Days
• US Class Current: 438/513
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures
• CPC Class Codes: H01L 21/2236 from or into a plasma phase

Abstract

A plasma doping apparatus includes a chamber and a plasma source that generates ions from a dopant gas. A platen is positioned in the chamber adjacent to the plasma source that supports a wafer for plasma doping. A deflection grid comprising a first and second deflection electrode is positioned in the chamber between the plasma source and the platen. The deflection grid deflects ions with an angle that is proportional to a voltage difference between the first and the second deflection electrodes.

Claims

1. A plasma doping apparatus comprising:

a) a chamber;

b) a plasma source that generates ions from a feed gas;

c) a platen positioned in the chamber adjacent to the plasma source, the platen supporting a wafer for plasma doping; and

d) a deflection grid comprising a first and second deflection electrode positioned in the chamber between the plasma source and the platen, the deflection grid deflecting ions with an angle that is proportional to a voltage difference between the first and the second deflection electrodes.

2. The plasma doping apparatus of claim 1 wherein the plasma source comprises at least one of an inductively coupled plasma source, a capacitively coupled plasma source, a toroidal plasma source, a helicon plasma source, a DC plasma source, a glow discharge plasma source, a remote plasma source, and a downstream plasma source.

3. The plasma doping apparatus of claim 1 wherein a distance between the deflection grid and the platen is chosen to improve a uniformity of ion flux at the wafer.

4. The plasma doping apparatus of claim 1 wherein both the deflection grid and the wafer are biased at substantially the same potential.

5. The plasma doping apparatus of claim 1 wherein the deflection grid and the wafer are biased at different potentials.

6. The plasma doping apparatus of claim 1 wherein the deflection grid comprises a plurality of deflection grids.

7. A plasma doping apparatus comprising:

a) a chamber;

b) a plasma source that generates ions from a feed gas;

c) a platen positioned in the chamber adjacent to the plasma source, the platen supporting a wafer for plasma doping; and

d) a deflection grid that is positioned in the chamber between the plasma source and the platen, the deflection grid comprising

i. a top section that defines apertures for passing the ions from the plasma source through the deflection grid, the top section extracting ions from the plasma source at an energy that is proportional to a voltage applied to the top section; and

ii. a first and second plurality of deflection electrodes that are biased at a first and second deflection voltage, respectively, the first and second plurality of deflection electrodes deflecting ions with an angle that is proportional to a voltage difference between the first and the second deflection voltage.

8. The plasma doping apparatus of claim 7 wherein the plasma source comprises at least one of an inductively coupled plasma source, a capacitively coupled plasma source, a toroidal plasma source, a helicon plasma source, a DC plasma source, a glow discharge plasma source, a remote plasma source, and a downstream plasma source.

9. The plasma doping apparatus of claim 7 wherein the first plurality of deflection electrodes is biased at a positive voltage and the second plurality of deflection electrodes is biased at a negative voltage.

10. The plasma doping apparatus of claim 7 wherein only one of the first and second plurality of deflection electrodes is biased.

11. The plasma doping apparatus of claim 7 wherein the deflection grid comprises a plurality of deflection grids.

12. The plasma doping apparatus of claim 7 further comprising a power supply that is electrically connected to the top section of the deflection grid wherein the power supply generates a pulsed waveform that extracts ions from the plasma source with an energy that is proportional to an amplitude of the voltage pulse.

13. The plasma doping apparatus of claim 7 further comprising an RF power supply that is electrically connected to the top section of the deflection grid wherein the RF power supply generates an RF signal that extracts ions from the plasma source with an energy that is proportional to an amplitude of the RF signal.

14. The plasma doping apparatus of claim 7 further comprising a DC power supply that is electrically connected to the top section of the deflection grid wherein the DC power supply generates a DC signal that extracts ions from the plasma source with an energy that is proportional to an amplitude of the DC signal.

15. The plasma doping apparatus of claim 7 wherein an area of the deflection grid is greater than or equal to an area of the wafer.

16. The plasma doping apparatus of claim 7 wherein at least some of the first and second plurality of deflection electrodes comprise rods formed of electrically conducting materials.

17. The plasma doping apparatus of claim 7 further comprising an electrode that is positioned proximate to the deflection grid, the electrode being at substantially the same potential as the deflection grid so that at least a portion of electrons generated by the wafer during plasma doping are absorbed by the electrode.

18. The plasma doping apparatus of claim 7 further comprising a translation stage that is coupled to the platen, the translation stage scanning the wafer in at least one direction.

19. The plasma doping apparatus of claim 7 further comprising at least one oscillator that is mechanically coupled to at least one of the deflection grid and the platen, the at least one oscillator dithering at least one of the deflection grid and the wafer.

20. A method of plasma doping comprising:

a) generating a plasma in a chamber from a dopant gas, the plasma containing dopant ions;

b) biasing a deflection grid with a voltage that attracts the dopant ions from the plasma and directs the dopant ions through apertures in the deflection grid; and

c) electrostatically deflecting the dopant ions traveling through the aperture at an angle that is determined by a voltage difference between two deflection electrodes so that the dopant ions impact a surface of a wafer at a non-normal angle of incidence.

21. The method of claim 20 wherein the electrostatically deflecting the dopant ions traveling through the aperture comprises biasing the two deflection electrodes with alternating positive and negative potentials.

22. The method of claim 21 further comprising adjusting amplitudes of at least one of the alternating positive and negative potentials to improve uniformity of the dopant ions impacting the surface of the wafer.

23. The method of claim 20 further comprising electrostatically deflecting the dopant ions traveling through the aperture at a second angle that is determined by a second voltage difference between the two deflection electrodes so that the dopant ions impact the surface of the wafer at a second non-normal angle of incidence.

24. The method of claim 20 further comprising adjusting the voltage difference applied between the two deflection electrodes so that the dopant ions impact the surface of the wafer at a desired non-normal angle of incidence.

25. The method of claim 20 further comprising adjusting the voltage difference between the two deflection electrodes so that the dopant ions achieve a desired lateral straggle of dopant ions in the wafer.

26. The method of claim 20 further comprising adjusting the voltage difference between the two deflection electrodes to reduce channeling of dopant ions into the wafer.

27. The method of claim 20 further comprising selecting a voltage that biases the deflection grid to achieve a predetermined ion energy.

28. The method of claim 20 further comprising periodically biasing the deflection grid to a potential that at least partially neutralizes charge on or proximate to the wafer.

29. The method of claim 20 further comprising biasing the wafer at a potential that is positive with respect to the deflection grid in order to contain secondary electrons generated by the wafer.

30. The method of claim 20 further comprising periodically grounding the deflection grid to at least partially neutralize charge on or proximate to the wafer.

31. The method of claim 20 further comprising absorbing electrons generated by the target with an electrode at ground potential.

32. The method of claim 20 further comprising applying a magnetic field in a region between the deflection grid and the wafer to trap at least a portion of electrons that are located proximate to the wafer.

33. The method of claim 20 further comprising dithering at least one of the deflection grid and the grating to improve uniformity of the dopant ions impacting the wafer.

34. The method of claim 20 further comprising translating at least one of the deflection grid and the grating to improve uniformity of the dopant ions impacting the wafer.

35. A method of performing multi-step plasma doping:

a) generating a plasma in a chamber from a dopant gas, the plasma containing dopant ions;

b) biasing a deflection grid with a voltage that attracts the dopant ions from the plasma and directs the dopant ions through apertures in the deflection grid; and

c) generating a first voltage difference between two deflection electrodes for a first time period, the first voltage difference causing dopant ions to impact a surface of a wafer at a first non-normal angle of incidence for the first time period; and

d) generating a second voltage difference between the two deflection electrodes for a second time period, the second voltage difference causing dopant ions to impact the surface of the wafer at a second non-normal angle of incidence during the second time period.