METHOD OF FORMING THREE DIMENSIONAL FEATURES ON LIGHT EMITTING DIODES FOR IMPROVED LIGHT EXTRACTION
First Claim
Patent Images
1. An LED precursor structure comprising:
- at least one Group III nitride active layer;
a photoresist layer on said Group III nitride-layer; and
an embossing stamp pressed into said photoresist layer.
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Abstract
A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
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Citations
10 Claims
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1. An LED precursor structure comprising:
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at least one Group III nitride active layer; a photoresist layer on said Group III nitride-layer; and an embossing stamp pressed into said photoresist layer. - View Dependent Claims (2, 3, 4)
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5. An LED comprising:
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a conductive substrate; at least one light-emitting active layer on said substrate; and a patterned semiconductor lenticular surface on said active layer opposite said substrate with no more than 25 microns of non-lenticular material between said patterned lenticular surface and said active layer. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification