Trench polysilicon diode
First Claim
1. A trench polysilicon diode comprising electrostatic discharge protection comprising:
- a N+ (P+) type substrate;
a N−
(P−
) type epitaxial region over said substrate;
a trench formed in said N−
(P−
) type epitaxial region, said trench comprising a top surface;
an insulating layer lining said trench;
a polysilicon filling said trench forming a top surface of said trench;
a P+ (N+) type doping polysilicon in said trench and formed by a P+ (N+) type ESD implant;
a N+ (P+) type doping polysilicon in said trench and formed by a N+ (P+) type source implant;
a diode formed in said trench such that a portion of said diode is formed below said top surface of said trench.
3 Assignments
0 Petitions
Accused Products
Abstract
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.
33 Citations
14 Claims
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1. A trench polysilicon diode comprising electrostatic discharge protection comprising:
-
a N+ (P+) type substrate; a N−
(P−
) type epitaxial region over said substrate;a trench formed in said N−
(P−
) type epitaxial region, said trench comprising a top surface;an insulating layer lining said trench; a polysilicon filling said trench forming a top surface of said trench; a P+ (N+) type doping polysilicon in said trench and formed by a P+ (N+) type ESD implant; a N+ (P+) type doping polysilicon in said trench and formed by a N+ (P+) type source implant; a diode formed in said trench such that a portion of said diode is formed below said top surface of said trench.
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7. The trench polysilicon diode as described in claim 16 wherein said Zener diode is used for electrostatic discharge protection.
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8. The trench polysilicon diode as described in claim 16 wherein said Zener diode is used for a clamping function.
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11. A temperature sensor comprising:
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a first trench polysilicon diode electrically coupled to a first pin and a second pin wherein a portion of said first trench polysilicon diode is under the surface a N−
(P−
) type epitaxial region;a second trench diode coupled to said first pin and said second pin wherein said first trench polysilicon diode and said second trench polysilicon diode are coupled in anti-parallel and wherein a temperature can be determined by a voltage measured between said first pin and said second pin and wherein a portion of said second trench polysilicon diode is under said surface said N−
(P−
) type epitaxial region. - View Dependent Claims (2, 3, 4, 5, 6, 9, 10, 12, 13, 14)
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Specification