Structure and Method for Forming a Planar Schottky Contact
First Claim
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1. A monolithically integrated trench FET and Schottky diode, comprising:
- a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer, a trench in the Schottky region having a dielectric layer lining the trench sidewalls and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench; and
an interconnect layer electrically contacting the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.
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Abstract
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.
40 Citations
29 Claims
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1. A monolithically integrated trench FET and Schottky diode, comprising:
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a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer, a trench in the Schottky region having a dielectric layer lining the trench sidewalls and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench; and an interconnect layer electrically contacting the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor structure, comprising:
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a first trench in a first region of a semiconductor layer, the first trench having a conductive electrode therein, wherein a top surface the conductive electrode is recessed relative to a top surface of the first region of the semiconductor layer; and a second trench in a second region of the semiconductor layer, the second trench having a conductive electrode therein, wherein the conductive electrode in the second trench has a top surface that is substantially coplanar with a top surface of the second region of the semiconductor layer, wherein a top surface of the first region of the semiconductor layer is higher than a top surface of the second region of the semiconductor layer. - View Dependent Claims (13)
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14. A method of forming a monolithically integrated trench FET and Schottky diode, the method comprising:
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forming a plurality of trenches in a FET region and a Schottky region of a semiconductor layer; forming a recessed conductive electrode in each trench; and forming a contact opening in the Schottky region by removing at least a portion of the semiconductor layer and a portion of a recessed conductive electrode in a trench so that a top surface of the recessed conductive electrode and a top surface of the semiconductor layer in the Schottky region are substantially coplanar. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of forming a semiconductor structure, comprising:
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forming a plurality of trenches in a semiconductor layer; forming a dielectric layer lining the trench sidewalls and bottom; forming a conductive electrode in each trench; forming a dielectric layer over the semiconductor layer; forming a contact opening by removing a portion of the dielectric layer, a portion of the semiconductor layer and a portion of each of one or more conductive electrodes in the plurality of trenches so that a top surface of the one or more conductive electrodes and a top surface of the semiconductor layer in the contact opening are substantially coplanar; and forming an interconnect layer electrically contacting the one or more conductive electrodes and the semiconductor layer through the contact opening such that the interconnect layer forms a Schottky contact with the semiconductor layer. - View Dependent Claims (28, 29)
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Specification