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METHOD OF FABRICATING BIPOLAR TRANSISTORS AND HIGH-SPEED LVDS DRIVER WITH THE BIPOLAR TRANSISTORS

  • US 20080136464A1
  • Filed: 10/31/2007
  • Published: 06/12/2008
  • Est. Priority Date: 12/06/2006
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a bipolar transistor and a field effect transistor on a substrate, the method comprising the steps of:

  • forming a first-conductive first well region of the bipolar transistor deeper than a first-conductive third well region and a second-conductive fourth well region of the field effect transistor; and

    forming a second-conductive second well region, which is formed in the first well region, shallower than the third and fourth well regions,wherein the bipolar transistor has a different potential than the field effect transistor.

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