SEMICONDUCTOR MEMORY DEVICE AND METHOD OF ERASING DATA THEREIN
First Claim
1. A semiconductor memory device having a memory cell array configured by arranging a plurality of NAND cell units, said NAND cell unit comprises:
- a plurality of electrically erasable programmable nonvolatile memory cells connected serially;
a first and a second selection transistor provided to connect both ends of said memory cells to a bit line and a source line, respectively; and
dummy cells inserted in said NAND cell unit adjacent to said first and second selection transistors, respectively,wherein said dummy cells in said NAND cell unit are erased simultaneously with said memory cells under a weaker erase potential condition than that for said memory cells and set in a higher threshold distribution than an erased state of said memory cells.
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Abstract
A semiconductor memory device comprises a memory cell array of NAND cell units. The NAND cell unit includes a plurality of electrically erasable programmable nonvolatile memory cells connected serially, and a first and a second selection transistor provided to connect both ends of the memory cells to a bit line and a source line, respectively. The semiconductor memory device also comprises dummy cells inserted in the NAND cell unit adjacent to the first and second selection transistors, respectively. The dummy cells in the NAND cell unit are erased simultaneously with the memory cells under a weaker erase potential condition than that for the memory cells and set in a higher threshold distribution than an erased state of the memory cells.
43 Citations
17 Claims
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1. A semiconductor memory device having a memory cell array configured by arranging a plurality of NAND cell units, said NAND cell unit comprises:
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a plurality of electrically erasable programmable nonvolatile memory cells connected serially; a first and a second selection transistor provided to connect both ends of said memory cells to a bit line and a source line, respectively; and dummy cells inserted in said NAND cell unit adjacent to said first and second selection transistors, respectively, wherein said dummy cells in said NAND cell unit are erased simultaneously with said memory cells under a weaker erase potential condition than that for said memory cells and set in a higher threshold distribution than an erased state of said memory cells. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of erasing data in a semiconductor memory device, said semiconductor memory device comprising a memory cell array of NAND cell units each including a plurality of electrically erasable programmable nonvolatile memory cells connected serially, and a first and a second selection transistor provided to connect both ends of said memory cells to a bit line and a source line, respectively, and dummy cells inserted in said NAND cell unit adjacent to said first and second selection transistors, respectively, said method comprising:
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prior to collectively erasing an erase unit in said memory cell array, executing preprogramming to elevate the threshold of said dummy cells in said erase unit; collectively erasing all memory cells in said erase unit including said dummy cells under a weaker erase potential condition for said dummy cells than that for said memory cells; and executing soft-programming for dissolving an over-erased cell in said erase unit. - View Dependent Claims (8, 9, 10, 11)
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12. A method of erasing data in a semiconductor memory device, said semiconductor memory device comprising a memory cell array of NAND cell units each including a plurality of electrically erasable programmable nonvolatile memory cells connected serially, and a first and a second selection transistor provided to connect both ends of said memory cells to a bit line and a source line, respectively, and dummy cells inserted in said NAND cell unit adjacent to said first and second selection transistors, respectively, said method comprising:
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collectively erasing all memory cells in an erase unit in said memory cell array including said dummy cells under a weaker erase potential condition for said dummy cells than that for said memory cells; executing writing to elevate the threshold of said dummy cells in said erase unit; and executing soft-programming for dissolving an over-erased cell in said erase unit. - View Dependent Claims (13, 14, 15, 16)
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17. A semiconductor memory device having a memory cell array configured by arranging a plurality of NAND cell units, said NAND cell unit comprises:
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a plurality of electrically erasable programmable nonvolatile memory cells connected serially; a first and a second selection transistor provided to connect both ends of said memory cells to a bit line and a source line, respectively; and a first dummy cell and a second dummy cell inserted in said NAND cell unit adjacent to said first and second selection transistors, respectively, wherein a first voltage is applied to said first dummy cell prior to apply a second voltage to said second dummy cell in a programming for said memory cell.
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Specification