METHOD OF CREATING SOLID OBJECT FROM A MATERIAL AND APPARATUS THEREOF

• US 20080142475A1
• Filed: 12/15/2006
• Published: 06/19/2008
• Est. Priority Date: 12/15/2006
• Status: Abandoned Application

• Current Assignee: Knowles Electronics Llc (Knowles Corporation)
• Original Assignee: Knowles Electronics Llc (Knowles Corporation)
• Inventors: Loeppert, Peter V., Lee, Sung B., Cech, Jay, Minervini, Anthony
• Application Number:
  US11/611,633
• Publication Number:
  US 20080142475A1
• Time in Patent Office: Days
• US Class Current: 216/23
• CPC Class Codes: B81C 1/00547 Etching processes not provided for in groups B81C1/00531 - B81C1/00539
• CPC Class Codes: B81C 2201/0143 Focussed beam, i.e. laser, ion or e-beam

Abstract

A directed energy source is applied to a portion of a material, creating at least one altered region and leaving at least one unaltered region. The material is exposed to an etchant which removes the at least one altered region leaving substantially all of the unaltered region.

Claims

1. A method of creating a solid object from a material comprising:

applying a directed energy source to a portion of a material, creating at least one altered region and leaving at least one unaltered region; and

exposing the material to an etchant which removes the at least one altered region leaving substantially all of the unaltered region.

2. The method of claim 1, wherein the material comprises a single crystal solid.

3. The method of claim 2, wherein the material comprises silicon.

4. The method of claim 1, wherein the altered region comprises at least one structure selected from a group consisting of non-crystalline and poly crystalline.

5. The method of claim 1, wherein the directed energy source comprises a laser.

6. The method of claim 1, wherein the directed energy source has a wavelength between 1000 nm and 1500 nm.

7. The method of claim 1, wherein removal of the altered region defines a feature selected from the group consisting of a hole, a channel, a recess, a pit, a via, a groove, a trench, a cantilever, a void, an undercut, and a combination thereof.

8. The method of claim 7, wherein at least a portion of the altered region is a shared surface with the material.

9. The method of claim 1, further comprising:

providing a masking material, the masking material being applied to the material to protect an underlying region of the material from the etchant.

10. The method of claim 1, wherein the etchant is selected from a group consisting of a wet etchant, a dry etchant, and a combination thereof.

11. The method of claim 1, wherein the etchant is a solution selected from a group consisting of Potassium Hydroxide (KOH), Tetramethylamonium Hydroxide (TMAH), or Ethylene Diamine Pyrocatechol (EDP).

12. The method of claim 1, wherein the solid object comprises at least a portion of a MEMS device.

13. A method of creating a solid object from a material comprising:

irradiating a portion of material with a directed energy source and creating at least one altered region; and

introducing the material into an etchant, the etchant removing the altered region.

14. The method of claim 13, wherein:

the material is selected from a group consisting of a single crystal solid and a near single crystal solid;

the altered region comprises at least one structure selected from a group consisting of non-crystalline and polycrystalline;

the directed energy source is a laser with a wavelength that is substantially absorbed by the material at high intensity; and

the etchant comprises an anisotropic etching solution thereby removing the altered region.

15. The method of claim 13, providing a masking material to the portion of the material, the masking material being resistant to attack by the etchant and protecting an underlying region of the material from the etchant.

16. A method of creating a solid object from a crystalline material comprising:

irradiating a portion of a crystalline material with a laser creating at least one noncrystalline region while leaving at least one crystalline region; and

exposing the crystalline material to an etchant thereby removing the noncrystalline region and leaving substantially all of the crystalline region.