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MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS

  • US 20080142483A1
  • Filed: 11/29/2007
  • Published: 06/19/2008
  • Est. Priority Date: 12/07/2006
  • Status: Abandoned Application
First Claim
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1. A method of forming a dielectric material in a substrate gap using a high-density plasma, the method comprising:

  • depositing a first portion of the dielectric material into the gap with the high-density plasma;

    exposing the first portion of dielectric material to an etchant comprising reactive species from a mixture that includes NH3 and NF3; and

    depositing a final portion of the dielectric material in the gap with the high-density plasma.

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