MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS

• US 20080142483A1
• Filed: 11/29/2007
• Published: 06/19/2008
• Est. Priority Date: 12/07/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lee, Young S., Wang, Anchuan, Bloking, Jason Thomas, Yieh, Ellie Y., Hua, Zhong Qiang, Purnawan, Rionard
• Application Number:
  US11/947,619
• Publication Number:
  US 20080142483A1
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH₃ and NF₃. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.

Claims

1. A method of forming a dielectric material in a substrate gap using a high-density plasma, the method comprising:

depositing a first portion of the dielectric material into the gap with the high-density plasma;

exposing the first portion of dielectric material to an etchant comprising reactive species from a mixture that includes NH₃ and NF₃; and

depositing a final portion of the dielectric material in the gap with the high-density plasma.

2. The method of claim 1, wherein the mixture that includes NH₃ and NF₃ includes flowing together separate sources of NH₃ and NF₃, and wherein a flow rate ratio of NH₃:

NF₃ is about 2;

1 or more.

3. The method of claim 2, wherein the flow rate ratio of NH₃:

NF₃ is about 8;

1 or more.

4. The method of claim 1, wherein the reactive species comprises a fluorine radical.

5. The method of claim 1, wherein at least a portion of the reactive species are created in a plasma that is generated from the mixture that includes NH₃ and NF₃.

6. The method of claim 5, wherein the plasma is remotely generated outside a chamber where the etchant is exposed to the first portion of the dielectric material.

7. The method of claim 1, wherein the etchant reacts to form a solid reaction product from a protruding structure of the dielectric material that at least partially blocks the deposition of additional dielectric material into the gap.

8. The method of claim 7, wherein the solid reaction product is removed from the substrate by heating the reaction product to convert it into a gas phase.

9. The method of claim 1, wherein the first and the final portions of dielectric material are deposited by exposing the gap to a silicon containing precursor and an oxygen containing precursor.

10. The method of claim 7, wherein the silicon containing precursor comprises TEOS and the oxygen containing precursor comprises ozone.

11. The method of claim 1, wherein the dielectric material comprises silicon oxide.

12. The method of claim 1, wherein the high-density plasma has an electron density of about 10¹¹ to 10¹³ cm⁻

3 and an ionized gas fraction of about 0.001 to 0.1.

13. The method of claim 1, wherein the depositing steps and the exposing step are performed in a single reaction chamber.

14. A method of forming a dielectric material in a substrate gap using a high-density plasma, the method comprising:

depositing a first portion of the dielectric material into the gap with the high-density plasma, wherein the deposition forms a protruding structure that at least partially blocks the deposition of the dielectric material into the gap;

exposing the first portion of dielectric material to an etchant comprising reactive species from a mixture that includes NH₃ and NF₃, wherein the etchant forms a solid reaction product with the protruding structure;

removing the solid reaction product from the substrate; and

depositing a final portion of the dielectric material in the gap with the high-density plasma.

15. The method of claim 14, wherein the mixture that includes NH₃ and NF₃ includes flowing together separate sources of NH₃ and NF₃, and wherein a flow rate ratio of NH₃:

NF₃ is about 2;

1 or more.

16. The method of claim 14, wherein at least a portion of the reactive species are created in a plasma that is generated from the mixture that includes NH₃ and NF₃.

17. The method of claim 14, wherein the plasma is remotely generated outside a chamber where the etchant is exposed to the first portion of the dielectric material.

18. The method of claim 14, wherein the solid reaction product is removed by heating the reaction product to convert it to a gas phase.

19. The method of claim 18, wherein the solid reaction product is heated to a temperature of at least 100°

C.

20. A method of forming a dielectric material on a substrate using a high-density plasma, the method comprising:

depositing a first portion of the dielectric material into a gap on the substrate with the high-density plasma in a HDPCVD chamber, wherein the deposition forms a protruding structure that at least partially blocks the deposition of the dielectric material into the gap;

transferring the substrate to an etching chamber and exposing the first portion of dielectric material to an etchant comprising reactive species from a mixture that includes NH₃ and NF₃, wherein the etchant forms a solid reaction product with the protruding structure;

removing the solid reaction product from the substrate; and

transferring the substrate back to the HDPCVD chamber and depositing a final portion of the dielectric material in the gap with the high-density plasma.