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Light-Emitting Diode Chip

  • US 20080142780A1
  • Filed: 04/14/2005
  • Published: 06/19/2008
  • Est. Priority Date: 04/14/2004
  • Status: Active Grant
First Claim
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1. A thin-film light-emitting diode chip, comprising:

  • a mirror layer;

    a light generating active zone; and

    a semiconducting radiation coupling-out area,wherein the distance between said mirror layer and said light-generating active zone is set in such a way that a radiation emitted by said active zone in the direction of said radiation coupling-out area of the thin-film light-emitting diode chip interferes with a radiation reflected from said mirror layer, and the internal quantum efficiency of said active zone is thereby influenced in such a way that an emission characteristic of the active zone with at least one preferred direction is obtained.

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