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Light emitting device

  • US 20080142782A1
  • Filed: 12/12/2007
  • Published: 06/19/2008
  • Est. Priority Date: 12/15/2006
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a semiconductor layer;

    an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line;

    an insulating layer formed on the active layer; and

    a metal layer formed on the insulating layer.

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