Light emitting device

• US 20080142782A1
• Filed: 12/12/2007
• Published: 06/19/2008
• Est. Priority Date: 12/15/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Choi, Chang Hwan, Moon, Won Ha, Kim, Hyun Jun, Kim, Dong Woohn
• Granted Patent: US 8,030,664 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0037 having a MIS barrier layer
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Claims

1. A light emitting device comprising:

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer.

2. The light emitting device of claim 1, wherein the semiconductor layer is formed of one of a GaN-based semiconductor, a ZnO-based semiconductor, a GaAs-based semiconductor, a GaP-based semiconductor, and a GaAsP-based semiconductor.

3. The light emitting device of claim 1, wherein the active layer comprises at least one layer.

4. The light emitting device of claim 1, wherein the active layer comprises a quantum well structure,

wherein the quantum well structure is one of a single quantum well structure and a multiple quantum well structure.

5. The light emitting device of claim 1, wherein the active layer comprises a plurality of quantum dots,

wherein the quantum dots comprise one of a group III-V compound semiconductor and a group II-VI compound semiconductor.

6. The light emitting device of claim 5, wherein the quantum dots comprise a GaN-based compound.

7. The light emitting device of claim 1, wherein the active layer comprises a plurality of quantum lines,

wherein the quantum lines comprise one of a group III-V compound semiconductor and a group II-VI compound semiconductor.

8. The light emitting device of claim 7, wherein the active layer comprises the quantum lines and an organic compound surrounding the quantum lines.

9. The light emitting device of claim 1, wherein an outermost layer in a propagation direction of light from the light emitting device has microstructure formed on a surface thereof.

10. The light emitting device of claim 1, wherein the semiconductor layer, the insulating layer and the metal layer have microstructures formed on surfaces thereof, respectively.

11. The light emitting device of claim 1, wherein the metal layer has a plurality of holes formed in a surface thereof.

12. The light emitting device of claim 11, wherein the holes are extended to a portion between a top of the insulating layer and a top of the active layer.

13. The light emitting device of claim 12, further comprising a photonic crystal structure formed on one surface thereof.

14. The light emitting device of claim 11, wherein the holes have a diameter and a spacing of 200 nm to 1000 nm, respectively.

15. The light emitting device of claim 1, further comprising a substrate,

wherein a stack having the semiconductor layer, the active layer, the insulating layer and the metal layer sequentially stacked is formed on the substrate,

wherein the stack is a nanowire structure.

16. The light emitting device of claim 15, wherein the substrate is provided thereon with a nanowire array comprising a plurality of nanowire structures.

17. The light emitting device of claim 15, wherein the active layer comprises one of a quantum well structure and a quantum dot.

18. The light emitting device of claim 15, wherein the active layer comprise at least one layer.

19. The light emitting device of claim 15, wherein the active layer comprises a quantum well structure,

wherein the quantum well structure comprises one of a single quantum well structure and a multiple quantum well structure.

20. The light emitting device of claim 15, wherein the active layer comprises at least one quantum dot,

wherein the quantum dot comprises a group III-V compound semiconductor.

21. The light emitting device of claim 20, wherein the quantum dot comprises a GaN-based compound.

22. The light emitting device of claim 15, wherein the active layer comprises at least one quantum dot,

wherein the quantum dot comprises a group II-VI compound semiconductor.