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ZnO diode and method of forming the same

  • US 20080142796A1
  • Filed: 10/31/2007
  • Published: 06/19/2008
  • Est. Priority Date: 12/13/2006
  • Status: Abandoned Application
First Claim
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1. A ZnO group diode, comprising:

  • a first electrode and a second electrode separated from each other; and

    an active layer between the first electrode and the second electrode, said active layer formed of MxIn1-xZnO with M representing a Group III metal,wherein the first electrode has a work function lower than the active layer and the second electrode has a work function higher than the active layer.

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