ZnO diode and method of forming the same

• US 20080142796A1
• Filed: 10/31/2007
• Published: 06/19/2008
• Est. Priority Date: 12/13/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Song, I-hun, Kim, Chang-Jung, Park, Young-soo, Kang, Dong-hun
• Application Number:
  US11/980,454
• Publication Number:
  US 20080142796A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/22 including, apart from doping materials or other impurities, only AIIBVI compounds
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A zinc oxide (ZnO) group and method of forming the same are provided. The ZnO group diode may include a first electrode and a second electrode that are separated from each other, and an active layer formed of M_xIn_1-xZnO (wherein “M” is a Group III metal) between the first electrode and the second electrode. The first electrode may have a work function lower than the active layer. The second electrode may have a work function higher than the active layer.

Claims

1. A ZnO group diode, comprising:

a first electrode and a second electrode separated from each other; and

an active layer between the first electrode and the second electrode, said active layer formed of M_xIn_1-xZnO with M representing a Group III metal,

wherein the first electrode has a work function lower than the active layer and the second electrode has a work function higher than the active layer.

2. The ZnO group diode of claim 1, wherein the Group III metal is at least one selected from the group consisting of gallium (Ga), aluminum (Al), titanium (Ti) and combinations thereof.

3. The ZnO group diode of claim 2, wherein x ranges from 0.2 to 0.8.

4. The ZnO group diode of claim 1, wherein the first electrode is formed of a material including a metal.

5. The ZnO group diode of claim 4, wherein the metal is selected from the group consisting of titanium (Ti), aluminum (Al), calcium (Ca), lithium (Li) and combinations thereof.

6. The ZnO group diode of claim 1, wherein the second electrode is formed of a material including a metal.

7. The ZnO group diode of claim 6, wherein the metal is selected from the group consisting of platinum (Pt), molybdenum (Mo), tungsten (W), iridium (Ir) and combinations thereof.

8. A ZnO group diode, comprising:

an active layer formed of M_xIn_l-xZnO with M representing a Group III metal; and

a first electrode and a second electrode separated from each other on the active layer,

wherein the first electrode has a work function lower than the active layer and the second electrode has a work function higher than the active layer.

9. The ZnO group diode of claim 8, wherein the Group III metal is at least one selected from the group consisting of gallium (Ga), aluminum (Al), titanium (Ti) and combinations thereof.

10. The ZnO group diode of claim 9, wherein x ranges from 0.2 to 0.8.

11. The ZnO group diode of claim 8, wherein the first electrode is formed of a material including a metal.

12. The ZnO group diode of claim 11, wherein the metal is selected from the group consisting of titanium (Ti), aluminum (Al), calcium (Ca), lithium (Li) and combinations thereof.

13. The ZnO group diode of claim 8, wherein the second electrode is formed of a material including a metal.

14. The ZnO group diode of claim 13, wherein the metal is selected from the group consisting of platinum (Pt), molybdenum (Mo), tungsten (W), iridium (Ir) and combinations thereof.

15. A method of forming a ZnO group-diode, comprising:

forming a first electrode and a second electrode separated from each other; and

forming an active layer contacting the first electrode and the second electrode, said active layer formed of M_xIn_1-xZnO with M representing a Group III metal,

wherein the first electrode has a work function lower than the active layer and the second electrode has a work function higher than the active layer.

16. The method according to claim 15, wherein the active layer is formed between the first electrode and the second electrode.

17. The method according to claim 15, wherein the Group III metal is at least one selected from the group consisting of gallium (Ga), aluminum (Al), titanium (Ti) and combinations thereof.

18. The method according to claim 17, wherein x ranges from 0.2 to 0.8.

19. The method according to claim 15, wherein the first electrode and the second electrode are formed on the active layer.

20. The method according to claim 19, wherein the Group III metal is at least one selected from the group consisting of gallium (Ga), aluminum (Al), titanium (Ti) and combinations thereof.

21. The method according to claim 20, wherein x ranges from 0.2 to 0.8.