Light emitting device having vertical structure and method for manufacturing the same

• US 20080142809A1
• Filed: 02/06/2007
• Published: 06/19/2008
• Est. Priority Date: 03/14/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation), LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Hyun Jae, Jang, Jun Ho
• Granted Patent: US 7,696,523 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

Claims

1. A light emitting device having a vertical structure, comprising:

a semiconductor layer having a multilayer structure;

a first electrode arranged at one surface of the semiconductor layer;

a support layer arranged on the first electrode; and

an impact damping layer arranged between the first electrode and the support layer, and made of a metal having a ductility higher than a ductility of a material of the support layer.

2. The light emitting device according to claim 1, further comprising:

a second electrode arranged at the other surface of the semiconductor layer.

3. The light emitting device according to claim 1, wherein the impact damping layer is made of at least one of In, Sn, Ag, Au, Pt, and Al.

4. The light emitting device according to claim 1, wherein the impact damping layer has a thickness of 1 to 10 μ

m.

5. The light emitting device according to claim 1, wherein the first electrode comprises an ohmic electrode and a reflection electrode.

6. The light emitting device according to claim 1, wherein the first electrode covers the semiconductor layer.

7. The light emitting device according to claim 1, wherein the semiconductor layer comprises:

an n type semiconductor layer;

an active layer arranged adjacent to the n type semiconductor layer; and

a p type semiconductor layer arranged adjacent to the active layer.

8. The light emitting device according to claim 1, wherein the semiconductor layer comprises a GaN-based semiconductor layer.

9. The light emitting device according to claim 1, wherein the support layer is made of at least one of Cu, Ni, and Au.

10. The light emitting device according to claim 1, wherein the support layer has a thickness of 30 to 200 μ

m.

11. The light emitting device according to claim 1, further comprising:

a seed metal arranged between the first electrode and the support layer, and adapted to achieve an easy bonding.

12. The light emitting device according to claim 11, wherein the seed metal is arranged between the first metal and the impact damping layer.

13. The light emitting device according to claim 11, wherein the seed metal is arranged between the impact damping layer and the support layer.

14. The light emitting device according to claim 1, further comprising:

a passivation layer covering a side surface of the semiconductor layer.

15. A light emitting device having a vertical structure, comprising:

a semiconductor layer having a multilayer structure;

a first electrode arranged at one surface of the semiconductor layer;

a second electrode arranged at the other surface of the semiconductor layer;

a passivation layer arranged at a side surface of the semiconductor layer;

a support layer arranged on the first electrode; and

a metal layer arranged between the first electrode and the support layer, and made of a metal having a ductility higher than a ductility of a material of the support layer.

16. The light emitting device according to claim 15, wherein the support layer is arranged on the first electrode and around the passivation layer.

17. The light emitting device according to claim 15, further comprising:

a seed metal arranged in at least one of a region between the first electrode and the metal layer and a region between the metal layer and the support layer.

18. A method for manufacturing a light emitting device having a vertical structure, comprising:

growing a semiconductor layer having a multilayer structure over an insulating substrate;

etching the semiconductor layer, to define unit device regions;

forming electrodes on the semiconductor layer;

forming a support layer on the electrodes;

irradiating a laser to the unit device regions of the semiconductor layer, to form grooves in the semiconductor layer;

removing the insulating substrate; and

forming metal pads on a surface of the semiconductor layer, from which the insulating substrate has been removed, in the unit device regions, respectively.

19. The method according to claim 18, further comprising:

forming an impact damping layer, using a metal having a ductility higher than a ductility of a material of the support layer, after the formation of the electrodes, but before the formation of the support layer.

20. The method according to claim 19, wherein the impact damping layer is made of at least one of In, Sn, Ag, Au, Pt, and Al.