Light emitting device having vertical structure and method for manufacturing the same
First Claim
1. A light emitting device having a vertical structure, comprising:
- a semiconductor layer having a multilayer structure;
a first electrode arranged at one surface of the semiconductor layer;
a support layer arranged on the first electrode; and
an impact damping layer arranged between the first electrode and the support layer, and made of a metal having a ductility higher than a ductility of a material of the support layer.
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Accused Products
Abstract
A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
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Citations
20 Claims
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1. A light emitting device having a vertical structure, comprising:
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a semiconductor layer having a multilayer structure; a first electrode arranged at one surface of the semiconductor layer; a support layer arranged on the first electrode; and an impact damping layer arranged between the first electrode and the support layer, and made of a metal having a ductility higher than a ductility of a material of the support layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light emitting device having a vertical structure, comprising:
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a semiconductor layer having a multilayer structure; a first electrode arranged at one surface of the semiconductor layer; a second electrode arranged at the other surface of the semiconductor layer; a passivation layer arranged at a side surface of the semiconductor layer; a support layer arranged on the first electrode; and a metal layer arranged between the first electrode and the support layer, and made of a metal having a ductility higher than a ductility of a material of the support layer. - View Dependent Claims (16, 17)
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18. A method for manufacturing a light emitting device having a vertical structure, comprising:
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growing a semiconductor layer having a multilayer structure over an insulating substrate; etching the semiconductor layer, to define unit device regions; forming electrodes on the semiconductor layer; forming a support layer on the electrodes; irradiating a laser to the unit device regions of the semiconductor layer, to form grooves in the semiconductor layer; removing the insulating substrate; and forming metal pads on a surface of the semiconductor layer, from which the insulating substrate has been removed, in the unit device regions, respectively. - View Dependent Claims (19, 20)
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Specification