Methods and apparatus for spatial light modulation

• US 20080145527A1
• Filed: 10/04/2007
• Published: 06/19/2008
• Est. Priority Date: 02/23/2005
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Pixtronix, Incorporated (Qualcomm, Inc.)
• Inventors: Barton, Roger W., Hagood, Nesbitt W., Gandhi, Jignesh, Fijol, John J., Steyn, Jasper Lodewyk
• Granted Patent: US 7,927,654 B2
• Time in Patent Office: Days
• US Class Current: 427/164
• CPC Class Codes: G02B 26/02 for controlling the intensity of light G02B26/004 takes precedence
• CPC Class Codes: G02B 6/0043 provided on the surface of the light guide
• CPC Class Codes: G02B 6/0046 Tapered light guide, e.g. wedge-shaped light guide
• CPC Class Codes: G02B 6/0061 to provide homogeneous light output intensity
• CPC Class Codes: G02B 6/0078 Side-by-side arrangements, e.g. for large area displays

Abstract

The invention relates to methods of manufacturing display devices which include the steps of depositing a layer of a dielectric material directly on a substantially transparent substrate, depositing a layer of metal directly on top of the dielectric material, forming a plurality of apertures in the layer of metal, forming a control matrix on top of the metal layer, and forming a plurality of light-modulating shutter assemblies on top of and in electrical communication with the control matrix such that the control matrix controls the light modulation functionality of the plurality of shutter assemblies.

Claims

1. A method of manufacturing a display device comprising:

depositing a layer of a dielectric material directly on a substantially transparent substrate;

depositing a layer of metal directly on top of the dielectric material;

forming a plurality of apertures in the layer of metal;

forming a control matrix on top of the metal layer; and

forming a plurality of light-modulating shutter assemblies on top of and in electrical communication with the control matrix such that the control matrix controls the light modulation functionality of the plurality of shutter assemblies.

2. The method of claim 1, wherein the control matrix includes a plurality of thin film components.

3. The method of claim 2, wherein the thin-film components comprise switches.

4. A method of manufacturing a display device comprising:

depositing a first layer of a dielectric material directly on a substantially transparent substrate;

depositing a second layer of a dielectric material directly on top of the first dielectric material depositing a layer of metal directly on top of the dielectric material;

forming a plurality of apertures in the layer of metal;

forming a control matrix on top of the metal layer; and

forming a plurality of light-modulating shutter assemblies on top of and in electrical communication with the control matrix such that the control matrix controls the light modulation functionality of the plurality of shutter assemblies.

5. A method of claim 4, wherein the second dielectric material has a refractive index lower than that of the first dielectric material.

6. A method of manufacturing a display device comprising:

depositing a high-reflectance layer on a substantially transparent glass substrate;

forming a plurality of apertures in the high-reflectance layer;

depositing an insulating layer directly on top of the high-reflectance layer;

depositing a plurality of thin-film components on the insulating layer;

forming a plurality of light-modulating shutter assemblies above, and in electrical communication with, the plurality of thin film components such that the thin-film components form a control matrix for controlling the light modulation of the plurality of light-modulating shutter assemblies.

7. The method of claim 6, wherein the high-reflectance layer has a reflectivity of greater than 85%.

8. The method of claim 6, wherein the high-reflectance layer comprises a composite layer of at least one metal and at least one dielectric.

9. The method of claim 6, wherein the high-reflectance layer comprises a fine grained metal film without inclusions.

10. The method of claim 9, comprising depositing the metal of the high-reflectance layer using a sputter process.

11. The method of claim 9, comprising depositing the metal of the high-reflectance layer via ion plating.

12. The method of claim 6, comprising forming a plurality of via holes in the insulating layer prior to the deposition of the plurality of thin-film components.