SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

• US 20080146187A1
• Filed: 02/17/2008
• Published: 06/19/2008
• Est. Priority Date: 04/30/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: DANNO, Tadatoshi, Tsuchiya, Tsutomu
• Granted Patent: US 7,937,105 B2
• Time in Patent Office: Days
• US Class Current: 455/333
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/27013 for holding or confining the layer connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/29007 Layer connector smaller than the underlying bonding area
• CPC Class Codes: H01L 2224/32013 the layer connector being larger than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48011 Length
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48253 connecting the wire to a potential ring of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/484 Connecting portions
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/49171 : Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/49503 : characterised by the die pad
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10162 : with a square active surface
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/20645 : larger or equal to 500 microns less than 600 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H03F 3/189 : High-frequency amplifiers, e.g. radio frequency amplifiers

Abstract

This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab. In such a semiconductor device, a circuit formed in the semiconductor element in a monolithic manner is comprised of a plurality of circuit parts and, in a specified circuit part (a low noise amplifier) which forms a portion of the circuit parts, all grounding electrode terminals out of electrode terminals of the semiconductor element are not connected to the tab through wires but are connected with the leads through wires.

Claims

1-54. -54. (canceled)

55. A semiconductor device for use in a radio communication device, comprising:

a semiconductor chip including a voltage controlled oscillator and a low noise amplifier;

a chip mounting portion over which the semiconductor chip is mounted;

a plurality of leads disposed around the chip mounting portion; and

a resin sealing body covering the semiconductor chip, parts of the leads and a part of the chip mounting portion,

wherein the chip mounting portion is exposed from a back surface of the resin sealing body;

a first electrode for providing ground potential to the low noise amplifier is disposed on the semiconductor chip;

a second electrode for providing ground potential to the voltage controlled oscillator is disposed on the semiconductor chip;

one of the first and second electrodes is electrically connected with one of the leads via a first conductive wire;

the other of the first and second electrodes is electrically connected with the chip mounting portion via a second conductive wire;

the first electrode and the second electrode are electrically isolated from each other in the semiconductor device; and

the first conductive wire and the second conductive wire are electrically isolated from each other in the semiconductor device.

56. The semiconductor device according to claim 55, wherein the semiconductor device has a Quad Flat Non-leaded Package (QFN) structure.

57. The semiconductor device according to claim 55, wherein the low noise amplifier processes a radio signal received by an antenna.

58. The semiconductor device according to claim 55, wherein the semiconductor device further comprises a modulator, a demodulator, and terminals for coupling with a base band circuit of the radio communication device,

an output signal from the demodulator is supplied to one of said terminals for input into the base band circuit, and

an input of the modulator is coupled to another of said terminals to receive an output signal from the base band circuit.

59. A semiconductor device for use in a radio communication device, comprising:

a semiconductor chip including a low noise amplifier amplifying radio signals, a voltage controlled oscillator outputting oscillating signals, a mixer receiving output signals of the low noise amplifier and the oscillating signals of the voltage controlled oscillator, and a demodulator receiving an output signal of the mixer;

a chip mounting portion over which the semiconductor chip is mounted;

a plurality of leads disposed around the chip mounting portion; and

a resin sealing body covering the semiconductor chip, parts of the leads and a part of the chip mounting portion,

wherein the chip mounting portion is exposed from a back surface of the resin sealing body;

a first electrode for providing ground potential to the low noise amplifier is disposed on the semiconductor chip;

a second electrode for providing ground potential to at least one of the voltage controlled oscillator, mixer and demodulator is disposed on the semiconductor chip;

one of the first and second electrodes is electrically connected with one of the leads via a first conductive wire;

the other of the first and second electrodes is electrically connected with the chip mounting portion via a second conductive wire;

the first electrode and the second electrode are electrically isolated from each other in the semiconductor device; and

the first conductive wire and the second conductive wire are electrically isolated from each other in the semiconductor device.

60. A semiconductor device for use in a radio communication device, comprising:

a semiconductor chip including a radio signal amplifier and a voltage controlled oscillator;

a chip mounting portion over which the semiconductor chip is mounted;

a plurality of leads disposed around the chip mounting portion;

a resin sealing body covering the semiconductor chip, parts of the leads and a part of the chip mounting portion;

a first electrode disposed on the semiconductor chip to provide ground potential to the radio signal amplifier; and

a second electrode disposed on the semiconductor chip to provide ground potential to the voltage controlled oscillator;

wherein the chip mounting portion is exposed from a back surface of the resin sealing body;

one of the first and second electrodes is electrically connected with one of the leads via a first conductive wire;

the other of the first and second electrodes is electrically connected with the chip mounting portion via a second conductive wire;

the first electrode and the second electrode are electrically isolated from each other in the semiconductor device; and

the first conductive wire and the second conductive wire are electrically isolated from each other in the semiconductor device.

61. A semiconductor device for use in a radio communication device, comprising:

a semiconductor chip including a radio signal amplifier and a voltage controlled oscillator;

a chip mounting portion over which the semiconductor chip is mounted;

a plurality of leads disposed around the chip mounting portion;

a resin sealing body covering the semiconductor chip, parts of the leads and a part of the chip mounting portion;

wherein the chip mounting portion is exposed from a back surface of the resin sealing body;

the voltage controlled oscillator has a first ground, and the radio signal amplifier has a second ground, the first and second grounds being electrically isolated from each other in the semiconductor device;

one of the first and second grounds is electrically connected with the chip mounting portion by at least one downbonded wire; and

the other of the first and second grounds is electrically connected to one or more of the leads by at least one additional wire and has no downbonded wire connection to the chip mounting portion.