HIGH-SPEED PROGRAMMING OF MEMORY DEVICES
First Claim
1. A method for operating a memory that includes a plurality of analog memory cells, comprising:
- storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group;
after storing the data, reading respective second cell values from the memory cells in the first group, and finding differences between the respective first and second cell values for each of one or more of the memory cells in the first group;
processing the differences to produce error information; and
storing the error information in a second group of the memory cells.
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Abstract
A method for operating a memory that includes a plurality of analog memory cells includes storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group. After storing the data, respective second cell values are read from the memory cells in the first group, and differences are found between the respective first and second cell values for each of one or more of the memory cells in the first group. The differences are processed to produce error information, and the error information is stored in a second group of the memory cells.
309 Citations
41 Claims
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1. A method for operating a memory that includes a plurality of analog memory cells, comprising:
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storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group; after storing the data, reading respective second cell values from the memory cells in the first group, and finding differences between the respective first and second cell values for each of one or more of the memory cells in the first group; processing the differences to produce error information; and storing the error information in a second group of the memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. Apparatus for operating a memory that includes a plurality of analog memory cells, comprising:
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Read/Write (R/W) circuitry, which is coupled to store data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group and, after storing the data, to read respective second cell values from the analog memory cells in the first group; and a processor, which is configured to find differences between the respective first and second cell values for each of one or more of the memory cells in the first group, to process the differences to produce error information and to store the error information in a second group of the memory cells. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. Apparatus for data storage, comprising:
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a memory, which comprises a plurality of analog memory cells; Read/Write (R/W) circuitry, which is coupled to store data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group and, after storing the data, to read respective second cell values from the analog memory cells in the first group; and a processor, which is configured to find differences between the respective first and second cell values for each of one or more of the memory cells in the first group, to process the differences to produce error information and to store the error information in a second group of the memory cells.
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Specification