Id Label, Id Card, and Id Tag

• US 20080149731A1
• Filed: 01/20/2005
• Published: 06/26/2008
• Est. Priority Date: 01/23/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Akiba, Mai, Kanno, Yohei, Tachimura, Yuko
• Granted Patent: US 8,136,735 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07718 the record carrier being manufactured in a continuous process, e.g. using endless rolls
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: G06K 19/07783 the coil being planar
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]

Abstract

As a non-contact ID label, ID tag and the like being widespread, it is required to manufacture a considerable quantity of ID labels at quite a low cost. An ID label attached to a product is, for example, required to be manufactured at 1 to several yens each, or preferably less than one yen. Thus, such a structure and a process are demanded that an ID label can be manufactured in a large quantity at a low cost. A thin film integrated circuit device included in the ID label, the ID card, and the ID tag of the invention each includes a thin film active element such as a thin film transistor (TFT). Therefore, by peeling a substrate on which TFTs are formed for separating elements, the ID label and the like can be manufactured in a large quantity at a low cost.

Claims

1. An ID label comprising:

a label substratum over which an antenna is formed;

a thin film integrated circuit device including a thin film transistor, provided in contact with the label substratum;

a separating sheet; and

an adhesive provided between the label substratum and the separating sheet.

2. The ID label according to claim 1, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

3. The ID label according to claim 1, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of an upper surface and a lower surface of the thin film integrated circuit device.

4. The ID label according to claim 1, wherein in the case where the protective layer is formed on the upper surface and the lower surface of the thin film integrated circuit device, it is placed the thin film integrated circuit device at a position of (d/2)±

30 μ

m or less when a total thickness of the thin film integrated circuit device and the top and bottom protective films is d.

5. The ID label according to claim 1, wherein a semiconductor film of the thin film transistor included in the thin film integrated circuit device contains hydrogen or halogen of 0.0005 to 5 atomic %.

6. The ID label according to claim 1, wherein a size of the thin film integrated circuit device is 0.09 to 25 mm²,

7. The ID label according to claim 1, wherein a thickness of the thin film integrated circuit device is 0.1 to 3 μ

m.

8. An ID label comprising:

an internal substratum over which an antenna is formed;

a label substratum;

a thin film integrated circuit device including a thin film transistor, provided in contact with the internal substratum;

a separating sheet; and

an adhesive provided between the label substratum and the separating sheet.

9. The ID label according to claim 8, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

10. The ID label according to claim 8, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of an upper portion and a lower portion of the thin film integrated circuit device.

11. The ID label according to claim 8, wherein in the case where the protective layer is formed on the upper surface and the lower surface of the thin film integrated circuit device, it is placed the thin film integrated circuit device at a position of (d/2)±

30 μ

m or less when a total thickness of the thin film integrated circuit device and the top and bottom protective films is d.

12. The ID label according to claim 8, wherein a semiconductor film of the thin film transistor included in the thin film integrated circuit device contains hydrogen or halogen of 0.0005 to 5 atomic %.

13. The ID label according to claim 8, wherein a size of the thin film integrated circuit device is 0.09 to 25 mm²,

14. The ID label according to claim 8, wherein a thickness of the thin film integrated circuit device is 0.1 to 3 μ

m.

15. An ID card comprising:

a card substratum over which an antenna is formed;

a thin film integrated circuit device including a thin film transistor, provided in contact with card substratum;

a cover for covering at least a side of the card substratum where an antenna and the thin film integrated circuit device are formed.

16. The ID card according to claim 15, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

17. The ID card according to claim 15, wherein the cover comprises resin and is formed by a laminating method.

18. The ID card according to claim 15, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

19. An ID card comprising:

an internal substratum over which an antenna is formed;

a thin film integrated circuit device including a thin film transistor, provided in contact with the internal substratum;

a cover for covering around the internal substratum.

20. The ID card according to claim 19, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

21. The ID card according to claim 19, wherein the cover comprises resin and is formed by a laminating method.

22. The ID card according to claim 19, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

23. An ID tag comprising:

a thin film integrated circuit including a thin film transistor provided in contact with a substratum on which an antenna is formed; and

a cover for covering at least a side in which the antenna and the thin film integrated circuit device are formed in the substratum.

24. The ID tag according to claim 23, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

25. The ID tag according to claim 23, wherein the cover comprises resin and is formed by a laminating method.

26. The ID tag according to claim 23, wherein a protective layer comprising a single layer of stacked layers containing silicon oxide, silicon nitride of silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

27. An ID tag comprising:

a thin film integrated circuit device including a thin film transistor provided in contact with an internal substratum on which an antenna is formed; and

a cover for covering around the internal substratum.

28. The ID tag according to claim 27, wherein the antenna and the thin film integrated circuit device are connected through a cross wiring.

29. The ID tag according to claim 27, wherein the cover comprises resin and is formed by a laminating method.

30. The ID tag according to claim 27, wherein a protective layer comprising a single layer of stacked layers containing silicon oxide, silicon nitride of silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

31. An object comprising:

a thin film integrated circuit device including a thin film transistor provided in contact with a substratum on which an antenna is formed; and

a cover for covering at least a side in which an antenna and the thin film integrated circuit device are formed.

32. The object according to claim 31, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

33. An object comprising:

a thin film integrated circuit device including a thin film transistor provided in contact with an internal substratum on which an antenna is formed; and

a cover for covering around the internal substratum.

34. The object according to claim 33, wherein a protective layer comprising a single layer or stacked layers containing silicon oxide, silicon nitride or silicon oxynitride is formed on at least one of the upper surface and the lower surface of the thin film integrated circuit device.

35. An ID label comprising:

a label substratum having a first surface and a second surface opposing to the first surface;

an antenna formed over the first surface of the label substratum;

a thin film integrated circuit device including a thin film transistor, over the first surface of the label substratum;

a wiring formed on the second surface of the label substratum;

a separating sheet provided over the first surface of the label substratum with an adhesive layer, antenna, and the thin film integrated circuit device interposed therebetween,

wherein the wiring electrically connect the thin film transistor and a part of the antenna through a contact hole formed in the label substratum.

36. An ID label comprising:

a label substratum;

an antenna formed over the label substratum;

an insulating layer over the antenna;

a wiring formed on the insulating layer;

a thin film integrated circuit device including a thin film transistor, over the label substratum;

a separating sheet provided over the label substratum with an adhesive layer, the antenna, and insulating layer, and the thin film integrated circuit device interposed therebetween,

wherein the wiring is connected to the antenna through a contact hoe formed in the insulating layer.