Semiconductor device, method and apparatus for testing same, and method for manufacturing semiconductor device

• US 20080149927A1
• Filed: 02/12/2008
• Published: 06/26/2008
• Est. Priority Date: 08/26/2004
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Jimi, Junichi
• Granted Patent: US 7,573,280 B2
• Time in Patent Office: Days
• US Class Current: 257/48
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: H01L 22/32 Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors arrangements for conducting electric current to or from the solid state body in operation H01L23/48
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys

Abstract

A semiconductor device wherein an electrode pad to be contacted a test probe for performing probe testing, a bonding area mark for defining a bonding area which performs wire boding on the electrode pad, and a probe area mark for defining a probe repair area for repairing or replacing the test probe for the electrode pad.

Claims

1. A semiconductor device comprising:

an electrode pad disposed in an INPUT/OUTPUT region of the semiconductor device; and

a probe area mark that defines a probe area for contacting a test probe to the electrode pad,

wherein the probe area mark is disposed away from the electrode pad; and

wherein the probe area mark is disposed on a scribe line and said electrode pad is disposed outside of the scribe line.

2. The semiconductor device according to claim 1, further comprising an insulation film provided to cover an outer circumference of the electrode pad.

3. The semiconductor device according to claim 1, further comprising:

a bonding area mark for defining a bonding area which performs bonding on the electrode pad, wherein the probe area mark defines a probe repair area for repairing or replacing the test probe for the electrode pad.

9. The semiconductor device according to claim 1, wherein a probe repair area of the electrode pad is defined based on a virtual line extending from the probe area mark in a direction parallel to a scribe line, and the bonding area of the electrode pad is defined based on a virtual line extending from the bonding area mark in the direction parallel to the scribe line.

10. The semiconductor device according to claim 1, wherein the probe area mark and the bonding area mark are respectively formed on each of both ends of a semiconductor chip provided in the semiconductor device, the probe repair area is defined based on a virtual line which connects the probe area mark formed on each of the both ends, and the bonding area is defined based on a virtual line which connects the bonding area mark formed on each of the both ends.

11. The semiconductor device according to claim 1, wherein the probe area mark is disposed on a scribe line.

4. A semiconductor device comprising:

an electrode pad to be contacted by a test probe for performing probe testing;

a bonding area mark for defining a bonding area which performs bonding on the electrode pad; and

a probe area mark for defining a probe repair area for repairing or replacing the test probe for the electrode pad,

wherein the probe area is disposed away from the electrode pad, and

wherein the probe area mark is disposed on a scribe line and said electrode pad is disposed outside of the scribe line.

5. The semiconductor device according to claim 4, wherein a probe area to be contacted to the test probe is defined based on the probe area mark.

6. The semiconductor device according to claim 4, further comprising an insulation film provided to cover an outer circumference of the electrode pad, wherein the probe area mark and the bonding area mark are provided away from the electrode pad.

7. The semiconductor device according to claim 4, wherein the probe repair area of the electrode pad is defined based on a virtual line extending from the probe area mark in a direction parallel to a scribe line, and the bonding area of the electrode pad is defined based on a virtual line extending from the bonding area mark in the direction parallel to the scribe line.

8. The semiconductor device according to claim 4, wherein the probe area mark and the bonding area mark are respectively formed on each of both ends of a semiconductor chip provided in the semiconductor device, the probe repair area is defined based on a virtual line which connects the probe area mark formed on each of the both ends, and the bonding area is defined based on a virtual line which connects the bonding area mark formed on each of the both ends.

12. The semiconductor device according to claim 4, wherein the electrode pad is disposed in an INPUT/OUTPUT region of the semiconductor device.

13. A semiconductor device comprising:

an electrode pad to be contacted by a test probe for performing probe testing;

a bonding area mark for defining a bonding area which performs bonding on the electrode pad; and

a probe area mark for defining a probe repair area for repairing or replacing the test probe for the electrode pad,

wherein in the electrode pad, probe damage of the test probe is formed in a direction tilted from a virtual line.

14. The semiconductor device according to claim 13, wherein a region from an end portion of the electrode pad on an internal circuit side of the semiconductor chip to the virtual line in the probe area mark is defined as the probe repair area.