Light generating semiconductor device and method of making the same
0 Assignments
0 Petitions
Accused Products
Abstract
In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.
15 Citations
20 Claims
-
1-15. -15. (canceled)
-
16. A semiconductor light generating device comprising:
-
a GaN-based semiconductor portion including a light generating layer, the light generating layer having a density of threading dislocations smaller than 1×
107 cm-2;an electrode provided on the GaN-based semiconductor portion; a conductive substrate bonded to a surface of the electrode by a conductive adhesive. - View Dependent Claims (17, 18, 19, 20)
-
Specification