Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
First Claim
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1. A trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein:
- said trenched gate further includes at least two mutually insulated trench-filling segments with an inter-segment insulation layer filling an over-etching pocket along sidewalls of said trenched gate surrounding a top portion of said bottom trench-filling segment thus preventing a top trench-filling segment to extend into said over-etching pocket.
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Abstract
This invention discloses method of for manufacturing a trenched semiconductor power device with split gate filling a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer disposed between a top and a bottom gate segments. The method further includes a step of forming the inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide.
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25 Claims
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1. A trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein:
said trenched gate further includes at least two mutually insulated trench-filling segments with an inter-segment insulation layer filling an over-etching pocket along sidewalls of said trenched gate surrounding a top portion of said bottom trench-filling segment thus preventing a top trench-filling segment to extend into said over-etching pocket. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a trenched semiconductor power device comprising step of opening a trench in a semiconductor substrate and said method further comprising:
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filling said trench with a trenching filling material followed by an etch back process to remove from a top portion of said trench until a desired depth is reached; and depositing a high density plasma (HDP) oxide layer followed by an annealing densification process at an elevated temperature for increasing an etch rate of said HDP oxide layer to be substantially the same as an etch rate of a thermal oxide. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of for manufacturing a trenched semiconductor power device with split gate filling a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer separating a top and a bottom gate segments, the method further comprising:
forming said inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide.
Specification