SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20080150102A1
• Filed: 10/16/2007
• Published: 06/26/2008
• Est. Priority Date: 10/16/2006
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Device Technology Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Ikeda, Yoshinari, Mochizuki, Eiji, Ueyanagi, Katsumichi, Yokomae, Toshiyuki
• Granted Patent: US 7,705,443 B2
• Time in Patent Office: Days
• US Class Current: 257/675
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/37011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/37144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/3754 Coating
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48175 the item being metallic
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73219 Layer and TAB connectors
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83224 : using a laser
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 23/3735 : Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/162 : the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

An electrical connection inside a semiconductor device is established by lead frames formed of plural conductor plates. The lead frames are disposed three-dimensionally so that the respective weld parts thereof are exposed toward a laser light source used in the laser welding. The laser welding is then performed by irradiating a laser beam. According to the above, welding can be performed readily in a reliable manner. The productivity of the semiconductor device and the manufacturing method of the semiconductor device can be thus enhanced. In addition, because the lead frames have the cooling effect, they have the capability of a heat spreader. It is thus possible to provide a semiconductor device and a manufacturing method of the semiconductor device with high productivity.

Claims

1. A semiconductor device comprising:

at least one semiconductor element, and

plural conductor plates, wherein an electrical connection inside the semiconductor device is established by the plural conductor plates; and

wherein the plural conductor plates are disposed three-dimensionally so that respective weld parts provided to the plural conductor plates are exposed toward a laser light source used in laser welding.

2. The semiconductor device according to claim 1, wherein:

at least one of the plural conductor plates is an output conductor of the semiconductor device, and laser welded to at least one of an electrode of the semiconductor element and a circuit pattern of a substrate on which the semiconductor element is mounted.

3. The semiconductor device according to claim 1, wherein:

at least one of the plural conductor plates is an input conductor of the semiconductor device, and laser welded to at least one of an electrode of the semiconductor element and a circuit pattern of a substrate on which the semiconductor element is mounted.

4. The semiconductor device according to claim 2, wherein:

the electrode of the semiconductor element is a heat spreader joined to an electrode layer of the semiconductor element.

5. The semiconductor device according to claim 1, wherein:

at least one of the plural conductor plates is a lead pin connected to a control terminal of the semiconductor element, and the lead pin is laser welded to a circuit pattern, electrically connected to the control terminal, of a substrate on which the semiconductor element is mounted.

6. The semiconductor device according to claim 1, wherein:

the semiconductor device is encapsulated with resin.

7. The semiconductor device according to claim 6, wherein:

a part of the conductor plate is fixed by the resin.

8. The semiconductor device according to claim 1, wherein:

at least one of the plural conductor plate other than the weld part forms an inclined structure.

9. The semiconductor device according to claim 1, wherein:

at least one of the conductor plates is inclined so that when a laser beam is irradiated onto the weld part of the conductor plate, the laser beam will not be irradiated to a part of the conductor plate other than the weld part.

10. The semiconductor device according to claim 1, wherein:

a concave portion to provide a difference in thickness of the conductor plate is formed in at least one of a top surface and a bottom surface of the conductor plate.

11. The semiconductor device according to claim 1, wherein:

at least one slit is formed in the conductor plate.

12. The semiconductor device according to claim 1, wherein:

at least one dimple is formed in at least one of a top surface and a bottom surface of the conductor plate.

13. The semiconductor device according to claim 1, wherein:

at least one U-shaped neck portion is formed in a side surface of the conductor plate.

14. The semiconductor device according to claim 1, wherein:

at least one rectangular neck portion is formed in a side surface of the conductor plate.

15. The semiconductor device according to claim 5, wherein:

the lead pin is provided in a plural form, and the lead pins are fixed integrally by resin to form a lead pin unit.

16. The semiconductor device according to claim 5, wherein:

a metal terminal board is formed on the control terminal of the semiconductor element, and the lead pin is laser welded to the metal terminal board.

17. The semiconductor device according to claim 16, wherein:

the metal terminal board is provided in a plural form, and the metal terminal boards are fixed integrally using an insulating material to form a metal terminal board unit.

18. A manufacturing method of a semiconductor device incorporating at least one semiconductor element and establishing an electrical connection inside the semiconductor device by laser welding of plural conductor plates, comprising:

disposing the plural conductor plates three-dimensionally so that respective weld parts provided to the plural conductor plates are exposed toward a laser light source used in the laser welding; and

irradiating a laser beam to the respective weld parts.

19. The manufacturing method of a semiconductor device according to claim 18, wherein the disposing of the plural conductor plates three-dimensionally includes:

molding a part of the conductor plate integrally into a resin case with resin; and

placing the resin case on a substrate on which the semiconductor element is mounted.

20. The manufacturing method of a semiconductor device according to claim 19, wherein the molding of the part of the conductor plate integrally with the resin includes:

fixing plural lead pins that are electrically connected to control terminals of the semiconductor element integrally by the resin to form a lead pin unit; and

molding a rest of the plural conductor plates other than those serving as the lead pins and each lead pin unit integrally with the resin case.