System and method for filling vias
First Claim
1. A method of forming a semiconductor device, the method comprising:
- forming a spacer layer on a substrate;
forming a via having walls and a bottom in the spacer layer;
depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via;
spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via;
exposing portions of the fill layer to an exposing light using a photomask;
developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via; and
removing the spacer layer.
1 Assignment
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Accused Products
Abstract
System and method for filling vias in integrated circuits A preferred embodiment comprises forming a spacer layer on a substrate, forming a via with walls and a bottom in the spacer layer, depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via, spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via, exposing portions of the fill layer to an exposing light using a photomask, developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via, and removing the spacer layer. The use of a spin-on photo-definable material increases the material'"'"'s filling and planarizing capabilities, while enabling a reduction in the number of process steps, which may reduce the likelihood of manufacturing defects, thereby increasing manufacturing yield.
8 Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a spacer layer on a substrate; forming a via having walls and a bottom in the spacer layer; depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via; spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via; exposing portions of the fill layer to an exposing light using a photomask; developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via; and removing the spacer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first conductive layer disposed above a substrate; a set of first conductive supports disposed on the first layer, wherein each of the first supports comprises a circumferential pillar of conductive material and a fill layer of photo-definable dielectric material filling an inside of the pillar; and a second conductive layer disposed on the first supports above the first layer, wherein portions of the second layer not overlying the first supports are separated from the first layer by a vacuum or a gas. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for fabricating a semiconductor device, the method comprising:
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forming a first layer over a substrate; depositing a first spacer layer on the first layer; creating a first opening in the first spacer layer to expose at least a portion of the first layer; forming a second layer over the first spacer layer, conformally coating an interior of the first opening; forming a fill layer on the second layer and filling the first opening; exposing portions of the fill layer to an exposing light as determined by a photomask; and developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the opening. - View Dependent Claims (19, 20)
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Specification