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System and method for filling vias

  • US 20080150150A1
  • Filed: 12/20/2006
  • Published: 06/26/2008
  • Est. Priority Date: 12/20/2006
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, the method comprising:

  • forming a spacer layer on a substrate;

    forming a via having walls and a bottom in the spacer layer;

    depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via;

    spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via;

    exposing portions of the fill layer to an exposing light using a photomask;

    developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via; and

    removing the spacer layer.

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