Semiconductor magnetic sensor
First Claim
1. A semiconductor magnetic sensor for detecting a magnetic flux density of a magnetic field applied from an outside, comprising:
- a hall element formed in one of a square shape and a rectangular shape, for performing magnetoelectric conversion;
a first transistor formed on a side of one side of the hall element, for driving the hall element, the first transistor having a drain connected to a first terminal formed on the one side of the hall element and having a source connected to a power supply terminal;
a second transistor formed on the side of the one side of the hall element, for driving the hall element, the second transistor having a drain connected to a second terminal formed on the one side of the hall element and having a source connected to the power supply terminal;
a third transistor formed on a side of another side opposite to the one side of the hall element, for driving the hall element, the third transistor having a drain connected to a third terminal formed on the another side of the hall element and having a source connected to a ground terminal; and
a fourth transistor formed on the side of the another side of the hall element, for driving the hall element, the fourth transistor having a drain connected to a fourth terminal formed on the another side of the hall element and having a source connected to the ground terminal.
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Accused Products
Abstract
To detect a magnetic flux density of a magnetic field applied from an outside, a semiconductor magnetic sensor of the present invention includes: a transistor (MP101) formed on a side of one, side of a hall element (100), for driving the hall element (100), the transistor (MP101) having a drain connected to a terminal (C101) formed on the one side; a transistor (MP102) formed on the side of the one side and having a drain connected to a terminal (C102) formed on the one side; a transistor (MN101) formed on a side of another side opposite to the one side and having a drain connected to a terminal (C103) formed on the another side; a transistor (MN102) formed on the side of the another side and having a drain connected to a terminal (C104) formed on the another side.
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Citations
2 Claims
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1. A semiconductor magnetic sensor for detecting a magnetic flux density of a magnetic field applied from an outside, comprising:
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a hall element formed in one of a square shape and a rectangular shape, for performing magnetoelectric conversion; a first transistor formed on a side of one side of the hall element, for driving the hall element, the first transistor having a drain connected to a first terminal formed on the one side of the hall element and having a source connected to a power supply terminal; a second transistor formed on the side of the one side of the hall element, for driving the hall element, the second transistor having a drain connected to a second terminal formed on the one side of the hall element and having a source connected to the power supply terminal; a third transistor formed on a side of another side opposite to the one side of the hall element, for driving the hall element, the third transistor having a drain connected to a third terminal formed on the another side of the hall element and having a source connected to a ground terminal; and a fourth transistor formed on the side of the another side of the hall element, for driving the hall element, the fourth transistor having a drain connected to a fourth terminal formed on the another side of the hall element and having a source connected to the ground terminal. - View Dependent Claims (2)
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Specification