Alterable Application Specific Integrated Circuit (ASIC)

• US 20080150579A1
• Filed: 03/10/2008
• Published: 06/26/2008
• Est. Priority Date: 07/08/2002
• Status: Active Grant

• Current Assignee: Liberty Patents LLC
• Original Assignee: Tier Logic, Inc.
• Inventors: Madurawe, Raminda Udaya
• Granted Patent: US 7,463,059 B2
• Time in Patent Office: Days
• US Class Current: 326/38
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H03K 19/1735 by wiring, e.g. uncommitted logic arrays
• CPC Class Codes: H03K 19/177 arranged in matrix form
• CPC Class Codes: H03K 19/17724 Structural details of logic blocks
• CPC Class Codes: H03K 19/17736 Structural details of routing resources
• CPC Class Codes: H03K 19/17748 Structural details of configuration resources
• CPC Class Codes: H03K 19/17796 for physical disposition of blocks

Abstract

A semiconductor device includes a plurality of circuit blocks; and a configuration circuit coupled to the plurality of circuit blocks to program the circuit blocks, the configuration circuit comprising a plurality of memory elements, the memory elements further comprising: a first set of memory elements to store a first instruction; and a second set of memory elements to store a second instruction; and a global control signal to select the first or second instruction in the configuration circuit to program the circuit blocks.

Claims

1. A semiconductor device, comprising:

a plurality of circuit blocks; and

a configuration circuit coupled to the plurality of circuit blocks to program the circuit blocks, the configuration circuit comprising a plurality of memory elements, the memory elements further comprising;

a first set of memory elements to store a first instruction; and

a second set of memory elements to store a second instruction; and

a global control signal to select the first or second instruction in the configuration circuit to program the circuit blocks.

2. The device of claim 1, wherein the memory elements are positioned above or below a said circuit block.

3. The device of claim 1, wherein the memory elements are mask programmable or field programmable to a user specification.

4. The device of claim 1, wherein a said circuit blocks comprises a capacitive node, and wherein a said memory element generates a control signal that is coupled to the capacitive node.

5. The device of claim 4, wherein the said control signal are at digital one or at digital zero voltage levels.

6. The device of claim 1, wherein one or more of said memory elements comprise user configurable Random Access Memory (RAM) elements or mask configured Read Only Memory (ROM) elements.

7. The device of claim 1, wherein the plurality of memory elements is selected from one of fuse links, anti-fuse capacitors, SRAM cells, DRAM cells, metal optional links, EPROM cells, EEPROM cells, flash cells, ferro-electric elements, optical elements, electro-chemical elements and magnetic elements.

8. The device of claim 1, wherein the plurality of memory elements comprises one or more of:

resistor, diode, capacitor, transistor, thin film device, thin film resistor, thin film capacitor, thin film transistor (TFT).

9. The device of claim 1, wherein the plurality of memory elements comprises one of:

a wire connection to a power-bus to provide a logic one data storage; and

a wire connection to a ground-bus to provide a logic zero data storage.

10. The device of claim 1, further comprising interconnects and routing signals to couple the circuit blocks and the configuration circuit.

11. The device of claim 1, further comprising:

one or more additional sets of memory elements, wherein each of the additional sets of memory elements store an additional instruction; and

a plurality of global control signals, wherein the control signals select one of the instructions in the configuration circuit to program the circuit blocks.

12. A programmable logic device, comprising:

a programmable logic block having a programmable node; and

a configuration circuit coupled to the programmable logic block to program the logic block, the configuration circuit comprising;

a select device; and

a first and second memory element, each memory element generating a control signal, each control signal coupled to the select device; and

a control signal coupled to the select device to selectively couple a said control signal to said programmable node.

13. The device of claim 12, wherein the programmable node is programmed by a digital zero or digital one signal level on a said control signal.

14. The device of claim 12, wherein the programmable node is a gate electrode of a pass-gate logic element.

15. The device of claim 12, wherein the programmable node is the common gate electrode of an inverter logic element.

16. The device of claim 12, wherein the first or second memory elements comprises one of:

fuse links, anti-fuse capacitors, SRAM cells, DRAM cells, metal optional links, EPROM cells, EEPROM cells, Flash cells, Ferro-Electric elements, Electro-Chemical cells, Electro-Magnetic cells, Carbon nano-tubes, Optical elements and Magnetic elements.

17. The device of claim 12, wherein the first or second or both memory elements comprises a user configurable Random Access Memory (RAM) element or a mask configured Read Only Memory (ROM) element.

18. A semiconductor device, comprising:

a circuit block programmable to a plurality of user specifications by a configuration circuit, the configuration circuit comprising;

a first set of memory elements to store a first specification; and

a second set of memory elements to store a second specification; and

a control signal to select the first or the second specification to program the circuit block.

19. The device of claim 18, wherein the circuit block further comprises programmable pass-gate logic elements, wherein the pass-gate is controlled by a control signal generated by the configuration circuit.

20. The device of claim 18, wherein the memory elements further comprises either user configurable Random Access Memory (RAM) elements or mask configured Read Only Memory (ROM) elements.