Voltage Regulator Integrated with Semiconductor Chip

• US 20080150623A1
• Filed: 12/25/2007
• Published: 06/26/2008
• Est. Priority Date: 12/26/2006
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung, Wei, Gu-Yeon
• Granted Patent: US 8,749,021 B2
• Time in Patent Office: Days
• US Class Current: 327/541
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04073 Bonding areas specifically adapted for connectors of different types
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/0558 being stacked
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05673 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/05676 Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/05683 : Rhenium [Re] as principal constituent
• CPC Class Codes: H01L 2224/0603 : Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11901 : with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/11912 : the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13023 : the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13173 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/13176 : Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/13183 : Rhenium [Re] as principal constituent
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/16245 : the item being metallic
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 23/49555 : the bent parts being the outer leads
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 27/0605 : integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19015 : including thin film passive components
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19103 : interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 3/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

The present invention reveals a semiconductor chip structure and its application circuit network, wherein the switching voltage regulator or converter is integrated with a semiconductor chip by chip fabrication methods, so that the semiconductor chip has the ability to regulate voltage within a specific voltage range. Therefore, when many electrical devices of different working voltages are placed on a Printed Circuit Board (PCB), only a certain number of semiconductor chips need to be constructed. Originally, in order to account for the different demands in voltage, power supply units of different output voltages, or a variety of voltage regulators need to be added. However, using the built-in voltage regulator or converter, the voltage range can be immediately adjusted to that which is needed. This improvement allows for easier control of electrical devices of different working voltages and decreases response time of electrical devices.

Claims

1. A semiconductor chip comprising:

a silicon substrate;

multiple active devices in or over said silicon substrate, wherein said active devices comprise a switch controller and a voltage feedback device, wherein said switch controller and said voltage feedback device comprise multiple MOS devices;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said active devices, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad and a contact pad of said metallization structure; and

an inductor component and a capacitor component connected to said pads through a first solder layer, wherein said inductor component, said capacitor component, a switch controller and voltage feedback device form a on-chip voltage regulator.

2. The semiconductor chip of claim 1, wherein said first metal layer comprises a copper layer having a thickness of between 0.05 and 2 micrometers.

3. The semiconductor chip of claim 1, wherein said passivation layer comprises a silicon nitride layer having a thickness of more than 0.3 micrometers.

4. The semiconductor chip of claim 1, further comprise a under bump metal structure between said pad and said inductor component and said capacitor component, wherein said first solder layer is over said under bump metal structure.

5. The semiconductor chip of claim 4, wherein said under bump metal structure comprise a nickel layer.

6. The semiconductor chip of claim 4, wherein said under bump metal structure comprise a copper layer.

7. The semiconductor chip of claim 1, further comprising a polymer layer between said passivation layer and said inductor component and said capacitor component.

8. The semiconductor chip of claim 7, wherein said polymer layer comprises polyimide.

9. The semiconductor chip of claim 1, wherein said contact pad is connected to an external circuit through a wire formed by wire-bonding.

10. The semiconductor chip of claim 1, wherein said contact pad is connected to an external circuit through a solder bump.

11. A semiconductor chip comprising:

a silicon substrate;

multiple active devices in or over said silicon substrate, wherein said active devices comprise a switch controller and a voltage feedback device, wherein said switch controller and said voltage feedback device comprise multiple MOS devices;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said active devices, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad and a contact pad of said metallization structure; and

an inductor component and a capacitor component connected to said pads through a first solder layer, wherein said inductor component, said capacitor component, a switch controller and voltage feedback device form a on-chip voltage converter.

12. The semiconductor chip of claim 11, wherein said first metal layer comprises a copper layer having a thickness of between 0.05 and 2 micrometers.

13. The semiconductor chip of claim 11, wherein said passivation layer comprises a silicon nitride layer having a thickness of more than 0.3 micrometers.

14. The semiconductor chip of claim 11, further comprise a under bump metal structure between said pad and said inductor component and said capacitor component, wherein said first solder layer is over said under bump metal structure.

15. The semiconductor chip of claim 14, wherein said under bump metal structure comprise a nickel layer.

16. The semiconductor chip of claim 14, wherein said under bump metal structure comprise a copper layer.

17. The semiconductor chip of claim 11, further comprising a polymer layer between said passivation layer and said inductor component and said capacitor component.

18. The semiconductor chip of claim 17, wherein said polymer layer comprises polyimide.

19. The semiconductor chip of claim 11, wherein said contact pas is connected to an external circuit through a wire formed by wire-bonding.

20. The semiconductor chip of claim 11, wherein said contact pas is connected to an external circuit through a solder bump.