ELECTROSTATIC CHUCK AND METHOD OF FORMING

• US 20080151466A1
• Filed: 12/19/2007
• Published: 06/26/2008
• Est. Priority Date: 12/26/2006
• Status: Abandoned Application

• Current Assignee: Saint-Gobain Ceramics & Plastics Incorporated (Compagnie De Saint-Gobain)
• Original Assignee: Saint-Gobain Ceramics & Plastics Incorporated (Compagnie De Saint-Gobain)
• Inventors: Simpson, Matthew A.
• Application Number:
  US11/960,340
• Publication Number:
  US 20080151466A1
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

Claims

1. An electrostatic chuck comprising:

a substrate;

a patterned conductive layer overlying the substrate, the patterned conductive layer defining electrode pathways separated by gaps;

a resistive layer overlying the patterned conductive layer; and

a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways, wherein the low-k dielectric layer comprises a material having a different phase than the material of the substrate.

3. The electrostatic chuck of claim 1, wherein the resistive layer comprises an oxide-based material.

11. The electrostatic chuck of claim 1, wherein the resistive layer has a resistance of less than about 10¹⁰ Ohm-cm².

12. The electrostatic chuck of claim 11, wherein the resistive layer has a resistance of greater than about 10⁴ Ohm/cm².

13. The electrostatic chuck of claim 1, wherein the low-k dielectric layer comprises a material having a dielectric constant of not greater than about 10.

16. The electrostatic chuck of claim 1, wherein the low-k dielectric layer comprises an oxide-based material.

18. The electrostatic chuck of claim 1, wherein the low-k dielectric layer comprises an organic material.

19. The electrostatic chuck of claim 18, wherein the organic material comprises a material selected from the group of materials consisting of polyimides, polyamides, polyolefins, silicones, acrylates, and polyesters.

24. The electrostatic chuck of claim 1, wherein the low-k dielectric layer has a resistivity of not less than about 10⁸ Ohm-cm.

27. The electrostatic chuck of claim 1, wherein the low-k dielectric layer has a resistivity of not less than about 10 times the resistivity of the resistive layer.

29. The electrostatic chuck of claim 1, wherein the gaps have an average width of not greater than about 5.0 mm.

31. The electrostatic chuck of claim 1, wherein the electrode pathways have an average width of not less than about 0.05 mm.

41. The electrostatic chuck of claim 1, wherein the electrostatic chuck has a patterned top surface.

42. The electrostatic chuck of claim 41, wherein the patterned top surface comprises protrusions of the electrode pathways above the low-k dielectric material within the gaps.

43. The electrostatic chuck of claim 42, wherein the protrusions of the electrode pathways define a receiving surface, the receiving surface having a surface roughness (R_s) of not greater than about 40 microns.

46. The electrostatic chuck of claim 1, wherein the patterned conductive layer comprises a width ratio between a width of the conductive pathways and a width of the gaps of not less than about 0.05.

48. The electrostatic chuck of claim 1, wherein a high-k dielectric layer overlies the resistive layer.

54. The electrostatic chuck of claim 48, wherein the high-k dielectric layer comprises an oxide-based material selected from the group of oxide materials consisting of aluminum oxide, titanium oxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, hafnium oxide, zirconium oxide, barium titanium oxide, and tantalum oxide.

56. The electrostatic chuck of claim 48, wherein the high-k dielectric layer defines a receiving surface having a surface roughness (R_s) of not greater than about 40 microns.

57. The electrostatic chuck of claim 1, wherein a capping layer overlies the resistive layer and the low-k dielectric layer.

2. (canceled)

4-10. -10. (canceled)

14-15. -15. (canceled)

17. (canceled)

20-23. -23. (canceled)

25-26. -26. (canceled)

28. (canceled)

30. (canceled)

32-40. -40. (canceled)

44-45. -45. (canceled)

47. (canceled)

49-50. -50. (canceled)

51. The electrostatic chuck of claim 48, wherein the dielectric ratio between the low-k dielectric material and the high-k dielectric material is not less than about b 1.0:

1.5.

51-53. -53. (canceled)

55. (canceled)

58-62. -62. (canceled)

63. A method of forming an electrostatic chuck comprising:

providing a substrate;

forming a conductive layer comprising a conductive material overlying the substrate;

forming a resistive layer comprising a resistive material overlying the conductive layer;

patterning the conductive layer and the resistive layer to form electrode pathways, defined by electrode stacks including the conductive layer and the resistive layer, wherein the electrode stacks are separated by gaps; and

forming a low-k dielectric layer within the gaps.

75. The method of claim 63, wherein the low-k dielectric layer is formed so as to have a reduced thickness relative to the electrode stacks.

76. The method of claim 63, wherein the method further comprises forming a high-k dielectric layer overlying the resistive layer, and patterning is carried out after forming the high-k dielectric layer such that the high-k dielectric layer is part of the electrode stacks.

64-74. -74. (canceled)

77. (canceled)

78. A method of forming an electronic device comprising:

providing an electrostatic chuck comprising (i) a substrate, (ii) a patterned conductive layer overlying the substrate, the patterned conductive layer defining electrode pathways separated by gaps, (iii) a resistive layer overlying the patterned conductive layer defining a work surface, and (iv) a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways, wherein the low-k dielectric layer comprises a material having a different phase than the material of the substrate;

providing a workpiece overlying the work surface;

providing a voltage across the electrostatic chuck to maintain the workpiece in proximity to the work surface; and

processing the workpiece to form an electronic device.

79-87. -87. (canceled)