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Spin transfer MRAM device with magnetic biasing

  • US 20080151614A1
  • Filed: 12/22/2006
  • Published: 06/26/2008
  • Est. Priority Date: 12/22/2006
  • Status: Active Grant
First Claim
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1. A method to improve performance of a magnetic random access memory, comprising:

  • providing an MTJ magnetic memory element, having an anisotropy field whose direction of magnetization in a free layer may be switched by passing through said free layer a spin polarized current having, in the absence of any external magnetic field, a first minimum value;

    providing a magnetic biasing field generated by a current in a wire that passes over said MTJ; and

    through application of said magnetic biasing field, at a magnitude that about equals or exceeds said anisotropy field, enabling said MTJ free layer to be switched by passing through said free layer a spin polarized current having a second minimum value that is less than said first minimum value.

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