IR RECEIVER AND IR TRANSMITTER/RECEIVER MODULE USING SAME

• US 20080152348A1
• Filed: 03/16/2007
• Published: 06/26/2008
• Est. Priority Date: 12/20/2006
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: CHEN, GA-LANE
• Application Number:
  US11/687,156
• Publication Number:
  US 20080152348A1
• Time in Patent Office: Days
• US Class Current: 398/130
• CPC Class Codes: H04B 10/40 Transceivers

Abstract

An exemplary IR receiver configured for capturing IR signals is provided. The IR receiver includes an aspherical lens, an IR bandpass filter, a wavefront encoding wave-plate, and a sensor. The aspherical lens defines an optical axis and an image side. The IR bandpass filter, the wavefront encoding wave-plate, and the sensor are sequentially arranged (i.e., in that order) at the image side of the aspherical lens, along the optical axis. The sensor is configured for detecting the IR signals sequentially passing through the aspherical lens, the IR bandpass filter and the wavefront encoding wave-plate and is thereby configured for capturing the IR signals. An exemplary IR transmitter/receiver module includes an IR transmitter configured for emitting IR signals and the IR receiver, as above-mentioned.

Claims

1. An infrared receiver configured for capturing infrared signals, comprising:

an aspherical lens defining an optical axis and an image side;

an infrared bandpass filter;

a wavefront encoding wave-plate; and

a sensor;

wherein the infrared bandpass filter, the wavefront encoding wave-plate, and the sensor are sequentially arranged at the image side of the aspherical lens, along the optical axis, and the sensor is configured for detecting the infrared (IR) signals sequentially passing through the aspherical lens, the infrared bandpass filter, and the wavefront encoding wave-plate, the sensor thereby being configured for capturing the IR signals.

2. The infrared receiver of claim 1, wherein the wavefront encoding wave-plate defines a saddle-shaped depressed portion located at a side thereof facing away from the sensor, the wavefront encoding wave-plate has a length of L and a thickness of T, a ratio of T/L is in the range of 10%˜

40%, the depressed portion has a maximum depth D along the thickness-wise direction of the wavefront encoding wave-plate, and a ratio of D/T is in the range of 60%˜

80%.

3. The infrared receiver of claim 2, wherein the ratio of T/L is in the range of 20%˜

35%, and the ratio of D/T is in the range of 65%˜

75%.

4. The infrared receiver of claim 2, wherein the depressed portion is mirror-symmetrical relative to the optical axis.

5. The infrared receiver of claim 2, further comprising a lens barrel and a holder, the lens barrel and the holder being threadedly engaged with each other, the aspherical lens and the infrared bandpass filter being secured into the lens barrel, the wavefront encoding wave-plate and the sensor being housed in the holder.

6. The infrared receiver of claim 5, further comprising an infrared glass plate, the infrared glass plate being secured in the lens barrel and located at an object side of the aspherical lens, the object side of the aspherical lens being opposite to the image side thereof.

7. The infrared receiver of claim 2, wherein the infrared bandpass filter comprises a multi-layer structure including a plurality of alternately formed titanium dioxide films and silicon dioxide films, and the amount of the titanium dioxide films and the silicon dioxide films, in total, is in the range of 30˜

50.

8. An infrared transmitter/receiver module, comprising:

an infrared transmitter comprising at least one infrared (IR) source each configured for emitting IR signals; and

an infrared receiver configured for capturing the infrared signals, the infrared receiver comprising;

an aspherical lens defining an optical axis and an image side;

an infrared bandpass filter;

a wavefront encoding wave-plate; and

a sensor;

wherein the infrared bandpass filter, the wavefront encoding wave-plate, and the sensor are sequentially arranged at the image side of the aspherical lens, along the optical axis, and the sensor is configured for detecting the infrared signals sequentially passing through the aspherical lens, the infrared bandpass filter, and the wavefront encoding wave-plate, the sensor thereby being configured for capturing the infrared signals.

9. The infrared transmitter/receiver module of claim 8, wherein the infrared transmitter further comprising a heat sink, the heat sink being thermally connected with said IR source.

10. The infrared transmitter/receiver module of claim 8, wherein at least one said infrared source is a gallium-aluminum-arsenide LED.

11. The infrared transmitter/receiver module of claim 8, wherein the wavefront encoding wave-plate defines a saddle-shaped depressed portion located at a side thereof facing away from the sensor, the wavefront encoding wave-plate has a length of L and a thickness of T, a ratio of T/L is in the range of 10%˜

40%, the depressed portion has a maximum depth D along the thickness-wise direction of the wavefront encoding wave-plate, and a ratio of D/T is in the range of 60%˜

80%.

12. The infrared transmitter/receiver module of claim 11, wherein the ratio of T/L is in the range of 20%˜

35%, and the ratio of D/T is in the range of 65%˜

75%.

13. The infrared transmitter/receiver module of claim 11, wherein the depressed portion is mirror-symmetrical relative to the optical axis.

14. The infrared transmitter/receiver module of claim 11, further comprising a lens barrel and a holder, the lens barrel and the holder being threadedly engaged with each other, the aspherical lens and the infrared bandpass filter being secured in the lens barrel, the wavefront encoding wave-plate and the sensor being housed in the holder.

15. The infrared transmitter/receiver module of claim 11, wherein the infrared bandpass filter comprises a multi-layer structure of a plurality of alternately formed titanium dioxide films and silicon dioxide films, and the number of the titanium dioxide films and the silicon dioxide films, in total, is in the approximate range of 30˜

50.