LIGHT-EMITTING DEVICES

• US 20080157111A1
• Filed: 11/26/2007
• Published: 07/03/2008
• Est. Priority Date: 04/15/2003
• Status: Active Grant

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Erchak, Alexei A., Lidorikis, Elefterios, Luo, Chiyan
• Granted Patent: US 8,072,134 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

Claims

1. A light-emitting device, comprising:

a multi-layer stack comprising III-V semiconductor materials including a light-generating region and a first layer supported by the light-generating region,

wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and

wherein the first layer has an edge which is at least one millimeter long.

2. The light-emitting device of claim 1, wherein the surface of the first layer includes a dielectric function that varies spatially according to a pattern.

3. The light-emitting device of claim 1, wherein the surface of the first layer is roughened.

4. The light-emitting device of claim 3, wherein the surface of the first layer is also patterned.

5. The light-emitting device of claim 1, wherein the edge is at least two millimeters long.

6. The light-emitting device of claim 1, wherein the edge is at least three millimeters long.

7. The light-emitting device of claim 1, wherein the first layer includes at least one additional edge which is at least one millimeter long.

8. The light-emitting device of claim 1, wherein at least 60% of a total amount of light generated by the light-generating region emerges from the light-emitting device via the surface of the first layer.

9. The light-emitting device of claim 1, wherein at least 70% of a total amount of light generated by the light-generating region emerges from the light-emitting device via the surface of the first layer.

10. The light-emitting device of claim 1, wherein the multi-layer stack of materials is supported by the layer of reflective material.

11. The light-emitting device of claim 1, further comprising a layer including phosphor disposed over the surface of the first layer.

12. The light-emitting device of claim 11, wherein the layer including phosphor is substantially uniformly disposed over the surface of the first layer.

13. The light-emitting device of claim 11, wherein sidewalls of the light-emitting device are substantially devoid of phosphor.

14. The light-emitting device of claim 11, wherein the layer including phosphor is a cover of the light-emitting device.

15. The light-emitting device of claim 11, further comprising a layer including a material that is substantially transparent to light that emerges from the light-emitting device, wherein the layer including the material that is substantially transparent is disposed adjacent the layer including phosphor.

16. The light-emitting device of claim 1, wherein the first layer comprises a layer of n-doped III-V semiconductor material, and the multi-layer stack further comprises a layer of p-doped III-V semiconductor material.

17. The light-emitting device of claim 16, wherein the III-V semiconductor material comprises GaN.

18. The light-emitting device of claim 1, further comprising a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material.

19. The light-emitting device of claim 1, further comprising electrical contacts configured to inject current into the light-emitting device.

20. The light-emitting device of claim 19, wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.

21. The light-emitting device of claim 1, wherein the light-emitting device comprises a light-emitting diode.

22. A light-emitting device, comprising:

a multi-layer stack comprising inorganic materials including a light-generating region and a first layer supported by the light-generating region,

wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and

wherein the first layer has an edge which is at least one millimeter long.

23. A light-emitting device, comprising:

a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region,

wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and

wherein the first layer has an edge which is at least one millimeter long.

24. A method of making a light-emitting device comprising:

providing a multi-layer stack comprising III-V semiconductor materials including a light-generating region and a first layer supported by the light-generating region;

configuring a surface of the first layer so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer; and

configuring the first layer so that an edge of the first layer is at least one millimeter long.

25. A method of making a light-emitting device comprising:

providing a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region;

configuring a surface of the first layer so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer; and

configuring the first layer so that an edge of the first layer is at least one millimeter long.