NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME

• US 20080157126A1
• Filed: 08/08/2007
• Published: 07/03/2008
• Est. Priority Date: 05/09/2005
• Status: Active Grant

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: SIVARAJAN, Ramesh, RUECKES, Thomas, BERTIN, Claude L., KONSEK, Steven L., MEINHOLD, Mitchell, GHENCIU, Eliodor G., HUANG, X. M. H.
• Granted Patent: US 8,513,768 B2
• Time in Patent Office: Days
• US Class Current: 257/209
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/19 Memory cell comprising at least a nanowire and only two terminals
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1021 including diodes only
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

Claims

1. A non-volatile nanotube diode device comprising:

first and second terminals;

a semiconductor element comprising a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and

a nanotube switching element comprising a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal;

wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

2. The non-volatile nanotube diode device of claim 1, wherein in a first logic state of the plurality of logic states a conductive pathway between the first and second terminals is substantially disabled and wherein in a second logic state of the plurality of logic states a conductive pathway between the first and second terminals is enabled.

3. The non-volatile nanotube diode device of claim 2, wherein in the first logic state the nanotube article has a relatively high resistance and in the second logic state the nanotube article has a relatively low resistance.

4. The non-volatile nanotube diode device of claim 3, wherein the nanotube fabric article comprises a non-woven network of unaligned nanotubes.

5. The non-volatile nanotube diode device of claim 4, wherein in the second logic state the non-woven network of unaligned nanotubes includes at least one electrically conductive pathway between the semiconductor element and the second terminal.

6. The non-volatile nanotube diode of claim 4, wherein the nanotube fabric article comprises a multilayered fabric.

7. The non-volatile nanotube diode device of claim 1, wherein above a threshold voltage between the first and second terminals, the semiconductor element is capable of flowing current from the anode to the cathode and wherein below the threshold voltage between the first and second terminals the semiconductor element is not capable of flowing current from the anode to the cathode.

8. The non-volatile nanotube diode device of claim 2, wherein in the first logic state, the conductive pathway between the anode and the second terminal is disabled.

9. The non-volatile nanotube diode device of claim 2, wherein in the second logic state, the conductive pathway between the anode and the second terminal is enabled.

10. The non-volatile nanotube diode device of claim 2, further comprising a conductive contact interposed between and providing an electrical communication pathway between the nanotube fabric article and the semiconductor element.

11. The non-volatile nanotube diode device of claim 10, wherein the first terminal is in electrical communication with the anode and the cathode is in electrical communication with the conductive contact of the nanotube switching element.

12. The non-volatile nanotube diode device of claim 11, wherein when in the second logic state, the device is capable of carrying electrical current substantially flowing from the first terminal to the second terminal.

13. The non-volatile nanotube diode device of claim 10, wherein the first terminal is in electrical communication with the cathode and the anode is in electrical communication with the conductive contact of the nanotube switching element.

14. The non-volatile nanotube diode device of claim 13, wherein when in the second logic state, the device is capable of carrying electrical current substantially flowing from the second terminal to the first terminal.

15. The non-volatile nanotube diode device of claim 1, wherein the anode comprises a conductive material and the cathode comprises an n-type semiconductor material.

16. The non-volatile nanotube diode device of claim 10, wherein the anode comprises a p-type semiconductor material and the cathode comprises a n-type semiconductor material.

17. A two-terminal non-volatile state device comprising:

first and second terminals;

a semiconductor field effect element having a source, a drain, a gate in electrical communication with one of the source and the drain, and a channel disposed between the source and the drain, the gate capable of controllably forming an electrically conductive pathway in the channel between the source and the drain; and

a nanotube switching element having a nanotube fabric article and a conductive contact, the nanotube fabric article disposed between and capable of forming an electrically conductive pathway between the conductive contact and the second terminal;

wherein the first terminal is in electrical communication with one of the source and the drain, the other of the source and drain is in electrical communication with the conductive contact; and

wherein a first set of electrical stimuli on the first and second conductive terminals causes a first logic state and a second set of electrical stimuli on the first and second conductive terminals causes a second logic state.

18. The nonvolatile state device of claim 17, wherein the first logic state corresponds to a relatively non-conductive pathway between the first and second terminals and the second logic state corresponds to a conductive pathway between the first and second terminals.

19. The non-volatile state device of claim 17, wherein the first set of electrical stimuli causes a relatively high resistance state in the nanotube fabric article and the second set of electrical stimuli causes a relatively low resistance state in the nanotube fabric article.

20. The non-volatile state device of claim 19, wherein the nanotube fabric article comprises a non-woven network of unaligned nanotubes.

21. The non-volatile state device of claim 20, wherein the nanotube fabric article comprises a multilayered fabric.

22. The non-volatile state device of claim 20, wherein in response to the second set of electrical stimuli, the non-woven network of unaligned nanotubes provides at least one electrically conductive pathway between the conductive contact and the semiconductor field-effect element.

23. The non-volatile state device of claim 17, wherein in response to the second set of electrical stimuli, a conductive pathway between the source and the drain is formed in the conductive channel.

24. The non-volatile state device of claim 17, wherein the semiconductor field effect element comprises a PFET.

25. The non-volatile state device of claims 17, wherein the semiconductor field effect element comprises a NFET.

26. The non-volatile state device of claim 17, wherein the source of the semiconductor field-effect element is in electrical communication with the first terminal and the drain is in electrical communication with the conductive contact of the nanotube switching element.

27. The non-volatile state device of claim 17, wherein the drain of the semiconductor field-effect element is in electrical communication with the first terminal and the source of the is in electrical communication with the conductive contact of the nanotube switching element.

28. A voltage selection circuit comprising:

an input voltage source;

an output voltage terminal and a reference voltage terminal;

a resistive element; and

a nonvolatile nanotube diode device comprising;

first and second terminals;

a semiconductor element in electrical communication with the first terminal; and

a nanotube switching element disposed between and capable of conducting electrical stimulus between the semiconductor element and the second terminal,

wherein the nonvolatile nanotube diode device is capable of conducting electrical stimulus between the first and second terminals,

wherein the resistive element is disposed between the input voltage source and the output voltage terminal, the nonvolatile nanotube diode device is disposed between and in electrical communication with the output voltage terminal and the reference voltage terminal, and

wherein the voltage selection circuit is capable of providing a first output voltage level when, in response to electrical stimulus at the input voltage source and the reference voltage terminal, the nonvolatile nanotube diode substantially prevents the conduction of electrical stimulus between the first and second terminals and wherein the voltage selection circuit is capable of providing a second output voltage level when, in response to electrical stimulus at the input voltage source and the reference voltage terminal, the nonvolatile nanotube diode conducts electrical stimulus between the first and second terminals.

29. The voltage selection circuit of claim 28, wherein the semiconductor element comprises an anode and a cathode, the anode in electrical communication with the first terminal and the cathode in communication with the nanotube switching element.

30. The voltage selection circuit of claim 28, wherein the semiconductor element comprises a field effect element having a source region in communication with the first terminal, a drain region in electrical communication with the nanotube switching element, a gate region in electrical communication with one of the source region and the drain region, and a channel region capable of controllably forming and unforming an electrically conductive pathway between the source and the drain in response to electrical stimulus on the gate region.

31. The voltage selection circuit of claim 28, wherein the first output voltage level is substantially equivalent to the input voltage source.

32. The voltage selection circuit of claim 28, wherein the second output voltage level is substantially equivalent to the reference voltage terminal.

33. The voltage selection circuit of claim 28, wherein the nanotube switching element comprises a nanotube fabric article capable of a high resistance state and a low resistance state.

34. The voltage selection circuit of claim 33, wherein the high resistance state of the nanotube fabric article is substantially higher than the resistance of the resistive element and wherein the low resistance state of the nanotube fabric article is substantially lower than the resistance of the resistive element.

35. The voltage selection circuit of claim 33, wherein the first output voltage level is determined, in part, by the relative resistance of the resistive element and the high resistance state of the nanotube fabric article, and wherein the second output voltage level is determined, in part, by the relative resistance of the resistive element and the low resistance state of the nanotube fabric article.