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GEOMETRY OF MOS DEVICE WITH LOW ON-RESISTANCE

  • US 20080157195A1
  • Filed: 12/26/2007
  • Published: 07/03/2008
  • Est. Priority Date: 12/28/2006
  • Status: Active Grant
First Claim
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1. A Metal Oxide Semiconductor (MOS) device formed on a substrate comprising:

  • a drain region;

    a gate region surrounding the drain region and formed in a loop around the drain region;

    a plurality of source regions arranged around the gate region and across from the drain region; and

    a plurality of bulk regions arranged around the gate region and separating the source regions.

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