SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a substrate;
forming a first passive circuit element at a first level above the substrate; and
forming a second passive circuit element at a second level above the first level, wherein at least one of the first or second passive circuit elements comprises a damascene structure.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
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Citations
30 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a substrate; forming a first passive circuit element at a first level above the substrate; and forming a second passive circuit element at a second level above the first level, wherein at least one of the first or second passive circuit elements comprises a damascene structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor component, comprising:
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forming an inductor using a damascene process, the inductor formed in a first vertical planar region; and forming a capacitor in a second vertical planar region, the capacitor having a first conductor separated from a second conductor by a dielectric material. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A semiconductor component, comprising:
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a substrate; a first passive circuit element at a first level above the substrate; and a second passive circuit element at a second level above the first level, wherein at least one of the first or second passive circuit elements comprises a damascene structure. - View Dependent Claims (27, 28)
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29. A semiconductor component, comprising:
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first and second vertical circuit levels; a first passive circuit element at the first vertical circuit level, wherein a portion of the first passive circuit element is at the second vertical circuit level; and a second passive circuit element at the second circuit level. - View Dependent Claims (30)
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Specification