NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME
First Claim
1. A nanotube diode comprising:
- a cathode formed of a semiconductor material; and
an anode formed of nanotubes,wherein the cathode and the anode are in fixed and direct physical contact, andwherein the cathode and anode are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode.
4 Assignments
0 Petitions
Accused Products
Abstract
Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.
167 Citations
28 Claims
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1. A nanotube diode comprising:
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a cathode formed of a semiconductor material; and an anode formed of nanotubes, wherein the cathode and the anode are in fixed and direct physical contact, and wherein the cathode and anode are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A nanotube diode comprising:
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a conductive terminal; a semiconductor element disposed over and in electrical communication with the conductive terminal, wherein the semiconductor element forms a cathode; and a nanotube switching element disposed over and in fixed electrical communication with the semiconductor element, wherein the nanotube switching element forms an anode, wherein the nanotube switching element comprises a conductive contact and nanotube fabric element capable of a plurality of resistance states, and wherein the cathode and the anode are constructed and arranged such that in response to sufficient electrical stimuli applied to the conductive contact and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the conductive terminal and the conductive contact. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification