RF semiconductor devices and methods for fabricating the same

• US 20080157391A1
• Filed: 03/10/2008
• Published: 07/03/2008
• Est. Priority Date: 07/26/2002
• Status: Abandoned Application

• Current Assignee: Yong Guen Lee
• Original Assignee: Yong Guen Lee
• Inventors: Lee, Yong Guen
• Application Number:
  US12/075,338
• Publication Number:
  US 20080157391A1
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

RF semiconductor devices and methods of making the same are disclosed. In a disclosed method, a trench for defining an active region and an element isolation region is formed in a semiconductor substrate. One or more gate lines is then formed within the active region. Next, an insulating layer is formed on the semiconductor substrate and the gate lines. Contact holes are then formed in the insulating layer. Contact plugs are then formed in the contact holes. Thereafter, a conductive pattern is electrically connected with the contact plugs.

Claims

1. A RF semiconductor device comprising:

a substrate;

first and second trenches defining an active region and at least one isolation region in the substrate, the first and second trenches being located on opposite sides of the active region, each of the first and second trenches having a longitudinal axis; and

a plurality of gate lines formed in the active region and oriented substantially perpendicularly to the longitudinal axes of the first and second trenches, wherein the gate lines do not extend along the longitudinal axes of the first and second trenches.

2. The RF semiconductor device of claim 1, further comprising an insulating layer disposed on the plurality of gate lines and the substrate.

3. The RF semiconductor device of claim 1, wherein the plurality of gate lines are not connected with each other in the isolation region.

4. The RF semiconductor device of claim 1, wherein at least two of the plurality of gate lines are connected in the active region.

5. The RF semiconductor device of claim 1, wherein adjacent gate lines are formed at a substantially constant distance along their lengths.

6. The RF semiconductor device of claim 2, wherein a thickness of the insulating layer is about 1000 to about 20000 angstroms.

7. The RF semiconductor device of claim 2, wherein the insulating layer comprises an oxide or a polyimide.

8. The RF semiconductor device of claim 2, further comprising contact plugs disposed in the insulating layer over the active region.

9. The RF semiconductor device of claim 8, further comprising a conductive pattern layer disposed on the insulating layer and the contact plug, wherein the conductive pattern is electrically connected with the contact plugs.

10. The RF semiconductor device of claim 9, wherein a thickness of the conductive pattern layer is above 1000 angstroms.

11. A RF semiconductor device comprising:

a substrate;

first and second trenches defining an active region and at least one isolating region in the substrate, the first and second trenches being located on opposite sides of the active region; and

at least two gate lines extending across the active region from the first trench to the second trench without passing above a center of either of the first and second trenches.

12. The RF semiconductor device of claim 11, further comprising an insulating layer disposed on said at least two gate lines and the substrate.

13. The RF semiconductor device of claim 11, wherein said at least two gate lines do not extend longitudinally along a longitudinal axis of the trench.

14. The RF semiconductor device of claim 11, wherein said at least two gate lines are not connected with each other in the isolation region.

15. The RF semiconductor device of claim 11, wherein said at least two gate lines are connected in the active region.

16. The RF semiconductor device of claim 12, wherein a thickness of the insulating layer is about 1000 to about 20000 angstroms.

17. The RF semiconductor device of claim 12, wherein the insulating layer comprises an oxide or a polyimide

18. The RF semiconductor device of claim 12, further comprising contact plugs in each of contact holes,

wherein the contact holes are disposed in the insulating layer over the active region, and

wherein a first group of the contact holes exposes portions of said at least two gate lines and a second group of the contract holes exposes portion of the substrate in the active region.

19. The RF semiconductor device of claim 13, wherein said at least two gate lines do not extend horizontally along the longitudinal axis of the trench.

20. The RF semiconductor device of claim 18, further comprising a conductive pattern layer disposed on the insulating layer and the contact plug, wherein the conductive pattern is electrically connected with the contact plugs.