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RF semiconductor devices and methods for fabricating the same

  • US 20080157391A1
  • Filed: 03/10/2008
  • Published: 07/03/2008
  • Est. Priority Date: 07/26/2002
  • Status: Abandoned Application
First Claim
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1. A RF semiconductor device comprising:

  • a substrate;

    first and second trenches defining an active region and at least one isolation region in the substrate, the first and second trenches being located on opposite sides of the active region, each of the first and second trenches having a longitudinal axis; and

    a plurality of gate lines formed in the active region and oriented substantially perpendicularly to the longitudinal axes of the first and second trenches, wherein the gate lines do not extend along the longitudinal axes of the first and second trenches.

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