Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer
First Claim
1. An innovative material and process used to reduce the driving voltage of micro scratch drive actuators, includesa. Adopting an ultra-low resistivity silicon wafer as the new substrate material of SDA device.b. Decreasing the line-width of the bushing and supporting beam of SDA by adding an additional deposition process in normal SDA process to overcome the inherent line-width limitation (2 μ
- m) of conventional g-line mask aligner.
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Abstract
Based on the voltage-division theory, this invention proposes a new method to decrease the driving voltage of the micro scratch drive actuator (SDA) by using an ultra-low resistivity silicon wafer as substrate. This patent has compared two SDA actuators with the same layout and fabricating processes but under different resistivity of substrate. The SDA fabricated on the ultra-low resistivity silicon wafer has demonstrated a lower driving voltage of only about 4˜12 Vo-p. However, the conventional SDA using normal silicon wafer needs higher driving voltage (30˜75 Vo-p), thus has lower probability for commercial applications. On the other hand, this invention presents a new SDA process to overcome the inherent 2 μm line-width limitation of conventional mask aligner with 4360 Å UV wavelength light source (g-line) and further to reduce the driving voltage of SDA.
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Citations
15 Claims
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1. An innovative material and process used to reduce the driving voltage of micro scratch drive actuators, includes
a. Adopting an ultra-low resistivity silicon wafer as the new substrate material of SDA device. b. Decreasing the line-width of the bushing and supporting beam of SDA by adding an additional deposition process in normal SDA process to overcome the inherent line-width limitation (2 μ - m) of conventional g-line mask aligner.
- View Dependent Claims (3, 4, 6, 8, 10, 12, 14)
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2. An innovative layout of micro scratch drive actuators includes
a. At least three new shapes of SDA plate, including the triangle SDA plate with etch-holes design, rectangle SDA plate with etch-holes design and hexagonal SDA plate with etch-holes design. Once the etch holes added to the layout of conventional SDA plate, the releasing of structure layer can be accelerated and the accumulated residual charges in the front end of SDA plate is reduced. b. At least four different length/width ratios of SDA-plate have been designed in this patent, including 58 μ - m/60 μ
m, 68 μ
m/60 μ
m, 78 μ
m/60 μ
m and 78 μ
m/65 μ
m. - View Dependent Claims (5, 7, 9, 11, 13, 15)
- m/60 μ
Specification