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Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer

  • US 20080157625A1
  • Filed: 04/27/2007
  • Published: 07/03/2008
  • Est. Priority Date: 12/28/2006
  • Status: Abandoned Application
First Claim
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1. An innovative material and process used to reduce the driving voltage of micro scratch drive actuators, includesa. Adopting an ultra-low resistivity silicon wafer as the new substrate material of SDA device.b. Decreasing the line-width of the bushing and supporting beam of SDA by adding an additional deposition process in normal SDA process to overcome the inherent line-width limitation (2 μ

  • m) of conventional g-line mask aligner.

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