Bandgap Reference Circuits

• US 20080157746A1
• Filed: 12/29/2006
• Published: 07/03/2008
• Est. Priority Date: 12/29/2006
• Status: Abandoned Application

• Current Assignee: MediaTek, Inc.
• Original Assignee: MediaTek, Inc.
• Inventors: Chen, Mu-Jung
• Application Number:
  US11/617,991
• Publication Number:
  US 20080157746A1
• Time in Patent Office: Days
• US Class Current: 323/313
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

Bandgap reference circuits capable of preventing start failure. A voltage generation circuit generates a temperature-independent fixed voltage and comprises a current mirror, an operational amplifier, and first and second BJT transistors. A start-up circuit triggers the current mirror until at least one of the first and second BJT transistors operates in a forward-active region when powering on.

Claims

1. A bandgap reference circuit, comprising:

a voltage generation circuit comprising;

a current mirror comprising at least one output terminal;

an operational amplifier coupled to the current mirror;

first and second BJT transistors coupled to two input terminals of the operational amplifier respectively, wherein at least one of the first and second BJT transistors is coupled to the output terminal of the current mirror through a conductive path; and

a start-up circuit triggering the current mirror;

wherein when powering on, the start-up circuit triggers the current mirror until at least one of the first and second BJT transistors operates in a forward-active region.

2. The bandgap reference circuit as claimed in claim 1, wherein the start-up circuit triggers the current mirror according to a reference voltage and a node voltage on the conductive path.

3. The bandgap reference circuit as claimed in claim 2, wherein the start-up circuit comprises:

a switching transistor comprising a first terminal coupled to a control terminal of the current mirror, and a second terminal coupled to a first power voltage; and

a comparator turning on the switching transistor to trigger the current mirror when the node voltage on the conductive path does not exceed the reference voltage.

4. The bandgap reference circuit as claimed in claim 3, wherein the start-up circuit further comprises voltage-divided circuit coupled between the first power voltage and a second power voltage, generating the reference voltage.

5. The bandgap reference circuit as claimed in claim 3, wherein the start-up circuit further comprises:

a fixed current source coupled between a second power voltage and a connection node; and

a third BJT transistor comprising an emitter coupled to the connection node and a collector coupled to the first power voltage, and an emitter voltage thereof serving as the reference voltage.

6. The bandgap reference circuit as claimed in claim 5, wherein the first, second, and third BJT transistors are diode-connected.

7. The bandgap reference circuit as claimed in claim 2, wherein the start-up circuit triggers the current mirror according to a reference voltage and an emitter voltage of one of the first and second BJT transistors.

8. The bandgap reference circuit as claimed in claim 2, wherein the start-up circuit triggers the current mirror according to a reference voltage and a voltage on one of the two input terminals of the operational amplifier.

9. The bandgap reference circuit as claimed in claim 2, wherein the start-up circuit triggers the current mirror when the node voltage on the conductive path does not exceed the reference voltage.

10. The bandgap reference circuit as claimed in claim 9, wherein the reference voltage is not less than threshold voltage of the first and second BJT transistors.

11. A bandgap reference circuit, comprising:

a voltage generation circuit generating a fixed voltage and comprising;

a current mirror comprising at least one output terminal;

an operational amplifier coupled to the current mirror;

first and second BJT transistors coupled to two input terminals of the operational amplifier respectively, wherein at least one of the first and second BJT transistors is coupled to the output terminal of the current mirror through a conductive path; and

a start-up circuit coupled between the current mirror and a node on the conductive path.

12. The bandgap reference circuit as claimed in claim 11, wherein the start-up circuit comprises:

a comparator comprising two input terminals coupled to the node on the conductive path and a reference voltage; and

a switching transistor coupled between a first power voltage and a control terminal of the current mirror, the switching transistor comprising a control terminal coupled to an output terminal of the comparator.

13. The bandgap reference circuit as claimed in claim 12, wherein the input terminals of the comparator are coupled to the reference voltage and an emitter of one of the first and second BJT transistors.

14. The bandgap reference circuit as claimed in claim 12, wherein the input terminals of the comparator are coupled to the reference voltage and a voltage on one of the two input terminals of the operational amplifier.

15. The bandgap reference circuit as claimed in claim 12, wherein the reference voltage is not greater than threshold voltage of the first and second BJT transistors.

16. A bandgap reference circuit, comprising:

a voltage generation circuit generating a temperature-independent fixed voltage and comprising a current mirror, an operational amplifier and first and second BJT transistors; and

a start-up circuit triggering the current mirror until at least one of the first and second BJT transistors operates in a forward-active region when powering on.

17. The bandgap reference circuit as claimed in claim 16, wherein the start-up circuit triggers the current mirror according to a reference voltage and a node voltage on a conductive path between an output terminal of the current mirror and at least one of the first and second BJT transistors.

18. The bandgap reference circuit as claimed in claim 17, wherein the start-up circuit triggers the current mirror according to a reference voltage and an emitter voltage of one of the first and second BJT transistors.

19. The bandgap reference circuit as claimed in claim 17, wherein the start-up circuit triggers the current mirror according to a reference voltage and a voltage on an inversion input terminal or a non-inversion input terminal of the operational amplifier.

20. The bandgap reference circuit as claimed in claim 17, wherein the reference voltage is not greater than threshold voltage of the first and second BJT transistors.

21. The bandgap reference circuit as claimed in claim 17, wherein the start-up circuit triggers the current mirror when the node voltage on the conductive path does not exceed the reference voltage.

22. The bandgap reference circuit as claimed in claim 17, wherein the reference voltage is generated by a voltage-divided circuit coupled between a first power voltage and a second power voltage.

23. The bandgap reference circuit as claimed in claim 17, wherein the reference voltage is generated by a fixed current source and a third BJT transistor.

24. The bandgap reference circuit as claimed in claim 17, wherein the start-up circuit comprises a comparator generating an enable signal when the node voltage on the conductive path does not exceed the reference voltage, triggering the current mirror until the first or the second BJT diode-connected transistors operates in the forward-active region.

25. The bandgap reference circuit as claimed in claim 24, wherein the start-up circuit further comprises a switching transistor comprising a first terminal coupled to a control terminal of the current mirror, and a second terminal coupled to a first power voltage, and a control terminal coupled to the enabling signal.

26. A start-up method for a bandgap reference circuit, comprising:

powering on the bandgap reference circuit; and

triggering a current mirror in the bandgap reference circuit, such that at least one diode-connected BJT transistor in the bandgap reference circuit operates in a forward active region.

27. The start-up method as claimed in claim 26, wherein triggering the current mirror in the bandgap reference circuit comprises:

comparing a reference voltage and a node voltage on a conductive path between an output terminal of the current mirror and at least one of the diode-connected BJT transistors; and

triggering the current mirror when the node voltage on the conductive path does not exceed the reference voltage.

28. The start-up method as claimed in claim 26, wherein the reference voltage is not greater than threshold voltage of the diode-connected BJT transistor.

29. The start-up method as claimed in claim 26, wherein the node voltage is an emitter voltage of the diode-connected BJT transistor.

30. The start-up method as claimed in claim 26, wherein the node voltage is a voltage on an inversion input terminal or a non-inversion input terminal of the operational amplifier coupled to the diode-connected BJT transistor.

31. A start-up method for a bandgap reference circuit, comprising:

powering on the bandgap reference circuit;

triggering a current mirror in the bandgap reference circuit to make at least one diode-connected BJT transistor in the bandgap reference circuit reach a forward active region; and

stop the triggering.

32. A start-up method for a bandgap reference circuit, comprising:

powering on the bandgap reference circuit; and

triggering a current mirror in the bandgap reference circuit to make at least one diode-connected BJT transistor in the bandgap reference circuit reach a forward active region;

wherein the triggering is done by a start-up circuit and the start-up circuit is not within a feedback loop of the bandgap reference circuit.