NON-VOLATILE STORAGE WITH BIAS FOR TEMPERATURE COMPENSATION
First Claim
1. A non-volatile storage system, comprising:
- a set of non-volatile storage elements formed, at least in part, on a substrate;
a set of word lines in communication with the set of non-volatile storage elements, at least one non-volatile storage element of the set of non-volatile storage elements is in communication with a selected word line of the set of word lines; and
one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits provide temperature-dependent biasing of the substrate and during the biasing, perform an operation on at least one non-volatile storage element of the set of non-volatile storage elements, the first non-volatile storage element is in communication with a selected word line of the set of word lines.
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Accused Products
Abstract
A non-volatile storage system in which a body bias is applied to a non-volatile storage system to compensate for temperature-dependent variations in threshold voltage, sub-threshold slope, depletion layer width and/or 1/f noise. A desired bias level is set based on a temperature-dependent reference signal. In one approach, a level of the biasing can decrease as temperature increases. The body bias can be applied by applying a voltage to a p-well and n-well of a substrate, applying a voltage to the p-well while grounding the n-well, or grounding the body and applying a voltage to the source and/or drain of a set of non-volatile storage elements. Further, temperature-independent and/or temperature-dependent voltages can be applied to selected and unselected word lines in the non-volatile storage system during program, read or verify operations. The temperature-dependent voltages can vary based on different temperature coefficients.
88 Citations
35 Claims
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1. A non-volatile storage system, comprising:
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a set of non-volatile storage elements formed, at least in part, on a substrate; a set of word lines in communication with the set of non-volatile storage elements, at least one non-volatile storage element of the set of non-volatile storage elements is in communication with a selected word line of the set of word lines; and one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits provide temperature-dependent biasing of the substrate and during the biasing, perform an operation on at least one non-volatile storage element of the set of non-volatile storage elements, the first non-volatile storage element is in communication with a selected word line of the set of word lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A non-volatile storage system, comprising:
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a set of non-volatile storage elements formed, at least in part, on a p-well region of a substrate; a set of word lines in communication with the set of non-volatile storage elements; and one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits provide a biasing of the substrate by applying a temperature-dependent voltage to the p-well region, a level of the temperature-dependent voltage is based on a desired bias level, and during the biasing, perform an operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A non-volatile storage system, comprising:
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a set of non-volatile storage elements formed, at least in part, on a substrate; a set of word lines associated with the set of non-volatile storage elements; and one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits perform a biasing of the substrate by applying a temperature-independent voltage to the substrate, and applying a temperature-dependent voltage to at least one of a source side and a drain side of the set of non-volatile storage elements, a difference between the temperature-independent voltage and the temperature-dependent voltage is based on a desired bias level, and during the biasing, the one or more control circuits perform an operation on at least one non-volatile storage element of the set of non-volatile storage elements. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification