BIASING NON-VOLATILE STORAGE BASED ON SELECTED WORD LINE
First Claim
1. A method for operating non-volatile storage, comprising:
- performing an operation on at least one non-volatile storage element of a set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of a set of word lines, the set of non-volatile storage elements is in communication with the set of word lines; and
biasing a substrate while performing the operation, the set of non-volatile storage elements are formed, at least in part, on the substrate, and a level of the biasing varies based on a position of the selected word line in the set of word lines.
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Accused Products
Abstract
A body bias is applied to a non-volatile storage system to compensate for performance variations which are based on the position of a selected word line which is associated with non-volatile storage elements undergoing program, read or verify operations. In one approach, the body bias increases when the selected word line is closer to a drain side of a NAND string than a source side. In another approach, the body bias varies when the selected word line is an end word line. In another approach, first or second body bias levels can be used when the selected word line is in a first or second group of word lines, respectively. The body bias reduces variations in threshold voltage levels and threshold voltage distributions which are based on the selected word line position. Gate-induced drain leakage (GIDL) is also reduced.
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Citations
26 Claims
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1. A method for operating non-volatile storage, comprising:
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performing an operation on at least one non-volatile storage element of a set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of a set of word lines, the set of non-volatile storage elements is in communication with the set of word lines; and biasing a substrate while performing the operation, the set of non-volatile storage elements are formed, at least in part, on the substrate, and a level of the biasing varies based on a position of the selected word line in the set of word lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for operating non-volatile storage, comprising:
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performing operations on non-volatile storage elements of a set of non-volatile storage elements, the non-volatile storage elements are in communication with a set of word lines, the performing operations comprises selecting one word line at a time from the set of word lines; determining a desired bias level based on a position of a currently selected word line in the set of word lines; and biasing the set of non-volatile storage elements according to the desired bias level while performing the operations. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A method for operating non-volatile storage, comprising:
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determining a condition of at least one non-volatile storage element in a set of non-volatile storage elements, the set of non-volatile storage elements are in communication with a set of word lines, the determining the condition comprises applying a voltage to a selected word line in the set of word lines, the selected word line is in communication with the at least one non-volatile storage element; and biasing a substrate during the determining the condition, the set of non-volatile storage elements are formed, at least in part, on the substrate, and a level of the biasing is set based on a position of the selected word line in the set of word lines. - View Dependent Claims (23, 24, 25, 26)
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Specification